Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

Autor: Kalinina, E. V., Khotujanov, G. F., Zubrilov, A. S., Tsvetkov, D. V., Vatnik, M. P., Soloviev, V. A., Tretjakov, V. D., Kong, H., Dmitriev, V. A.

Publikováno v: Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 1997, Vol. 46 Issue: 1 p259-262, 4p