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pro vyhledávání: '"Vasyliy A. Shvets"'
Autor:
Nikolay N. Mikhailov, Sergey A. Dvoretsky, Vladimir G. Remesnik, Ivan N. Uzhakov, Vasyliy A. Shvets, Vladimir Ya. Aleshkin
Publikováno v:
Photonics, Vol 10, Iss 4, p 430 (2023)
The studies of the interband electron transition energy in multiple Hg1-xCdxTe/Hg1-yCdyTe quantum wells (MQWs) at room temperature were carried out. The MQWs were grown on the (013) GaAs substrate by molecular beam epitaxy, with the layer composition
Externí odkaz:
https://doaj.org/article/b0c90abcc6714f47af9f7efad02aba58
