Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Vasyliy A. Shvets"'
Autor:
Nikolay N. Mikhailov, Sergey A. Dvoretsky, Vladimir G. Remesnik, Ivan N. Uzhakov, Vasyliy A. Shvets, Vladimir Ya. Aleshkin
Publikováno v:
Photonics, Vol 10, Iss 4, p 430 (2023)
The studies of the interband electron transition energy in multiple Hg1-xCdxTe/Hg1-yCdyTe quantum wells (MQWs) at room temperature were carried out. The MQWs were grown on the (013) GaAs substrate by molecular beam epitaxy, with the layer composition
Externí odkaz:
https://doaj.org/article/b0c90abcc6714f47af9f7efad02aba58
Autor:
Mikhailov, Nikolay N., Dvoretsky, Sergey A., Remesnik, Vladimir G., Uzhakov, Ivan N., Shvets, Vasyliy A., Aleshkin, Vladimir Ya.
Publikováno v:
Photonics; Apr2023, Vol. 10 Issue 4, p430, 12p