Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Vassilios Ioannou-Sougleridis"'
Autor:
Vasileios Ntinas, Ioannis Karafyllidis, Georgios Ch. Sirakoulis, Iosif-Angelos Fyrigos, Pascal Normand, Vassilios Ioannou-Sougleridis, Nikolaos Vasileiadis, Panagiotis Dimitrakis, Rafailia-Eleni Karamani
Publikováno v:
ISCAS
Research progress in edge computing hardware, capable of demanding in-the-field processing tasks with simultaneous memory and low power properties, is leading the way towards a revolution in IoT hardware technology. Resistive random access memories (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a51c7a462b8faaa1ececb9cbe937fcd5
https://doi.org/10.1109/iscas51556.2021.9401586
https://doi.org/10.1109/iscas51556.2021.9401586
Autor:
Panagiotis Loukas, Georgios Ch. Sirakoulis, Pascal Normand, Vassilios Ioannou-Sougleridis, Vasileios Ntinas, Nikolaos Vasileiadis, Panagiotis Karakolis, Panagiotis Dimitrakis, Iosif-Angelos Fyrigos, Ioannis Karafyllidis
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47df78f4ed98592a2547cae4d564c1ca
http://arxiv.org/abs/2103.09931
http://arxiv.org/abs/2103.09931
Autor:
Nikolaos Vouroutzis, Mario Barozzi, B. Colombeau, Giancarlo Pepponi, Vassilios Ioannou-Sougleridis, Dimitrios Skarlatos, J. Stoemenos, Nikolas Zographos, D. Velessiotis
Publikováno v:
ECS Transactions. 86:51-58
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ff5478d2806e39971018e532c6cb58
https://doi.org/10.1149/08610.0051ecst
https://doi.org/10.1149/08610.0051ecst
Autor:
Dimitrios Skarlatos, Christos Thomidis, Panagiotis Dimitrakis, M. C. Skoulikidou, D. Velessiotis, Giancarlo Pepponi, Benjamin Colombeau, Vassilios Ioannou-Sougleridis, Mario Barozzi, K. Papagelis, Nikolaos Vouroutzis
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P418-P428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d529cceac83ca0d663d7a3f3c22febb1
https://doi.org/10.1149/2.0201707jss
https://doi.org/10.1149/2.0201707jss
Autor:
Dimitrios Skarlatos, Vassilios Ioannou-Sougleridis, M. C. Skoulikidou, J. Stoemenos, Nikolaos Vouroutzis, D. Velessiotis
Publikováno v:
Materials Science in Semiconductor Processing. 122:105477
In this work, the surface damage induced in ion-implanted (100) Ge after extended (20 ms) flash lamp annealing (FLA) at 800–850 °C is investigated and discussed using combined results from scanning electron microscopy, transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b502a9347778aa4e4306e3befbadbda6
https://doi.org/10.1016/j.mssp.2020.105477
https://doi.org/10.1016/j.mssp.2020.105477
Autor:
A. Karageorgiou, Vassilios Ioannou-Sougleridis, M. Barlas, Spyridon Ladas, Dimitrios Skarlatos
Publikováno v:
Microelectronic Engineering. 159:84-89
In this work the effect of Al deposition process and the subsequent forming gas annealing on the interfacial properties of Al/Al2O3/p-Ge MOS capacitors is studied. Al2O3 has been deposited by ALD at 300°C. There is evidence that Al deposition by e-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03f65502d3f0841753a259cb5139a276
https://doi.org/10.1016/j.mee.2016.02.064
https://doi.org/10.1016/j.mee.2016.02.064
Autor:
Mikko Ritala, Pascal Normand, Thanassis Speliotis, Kenichiro Mizohata, Vassilios Ioannou-Sougleridis, Kaupo Kukli, Markku Leskelä, Jaakko Niinistö, Panagiotis Dimitrakis, Nikolaos Nikolaou
Publikováno v:
Microelectronic Engineering. 159:127-131
The electrical and chemical properties of atomic layer deposited (ALD) Al2O3 layers and their dependence on the oxygen source (water or oxygen plasma) are examined. Oxygen plasma ALD leads to Al2O3 layers with lower hydrogen contamination. The alumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179655d2649e9f3780bd28eb809b935c
https://doi.org/10.1016/j.mee.2016.03.021
https://doi.org/10.1016/j.mee.2016.03.021
Autor:
G. Benassayg, E. Bolomyti, Vassilios Ioannou-Sougleridis, Nikos Glezos, Pascal Normand, Panagiotis Dimitrakis
Publikováno v:
Microelectronic Engineering. 159:75-79
In this work we examine the high temperature charge retention characteristics of modified SONOS (polySi-oxide-nitride-oxide-Si) capacitors. The modified SONOS structures were synthesized by Si low-energy implantation (1keV) into oxide-nitride (ON) st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7361304f5315ed71b736b51db254f14d
https://doi.org/10.1016/j.mee.2016.02.038
https://doi.org/10.1016/j.mee.2016.02.038
Autor:
Stamatios Alafakis, Dimitrios Skarlatos, Konstantina Mergia, Athanassios Speliotis, Vassilios Ioannou-Sougleridis, Nikolaos Vouroutzis
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:024003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ef5a7c06af3f9868be25ac4c3babc38
https://doi.org/10.1149/2162-8777/ab682e
https://doi.org/10.1149/2162-8777/ab682e
Autor:
Michael Lübben, Vassilios Ioannou-Sougleridis, Pascal Normand, Panagiotis Dimitrakis, Panagiotis Karakolis, Ilia Valov
Publikováno v:
Advanced Materials. 27:6202-6207
By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bf2542893ccece7040ba092a14c5bd1
https://doi.org/10.1002/adma.201502574
https://doi.org/10.1002/adma.201502574