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4H-SiC VJFETs with Self-Aligned Contacts

Autor: Zekentes, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Vassilevski, Konstantin, Horsfall, Alton, Wright, Nick, Brosselard, Pierre, Niu, Shiqin, Lazar, Mihai, Planson, Dominique, Tournier, Dominique, Camara, Nicolas

Publikováno v: Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75

International audience; Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bd394ca9a036b7cb311d3a5a41b32436
https://hal.science/hal-02133681

Modelling of 4H-SiC VJFETS with self-aligned contacts

Autor: Zekentes, Konstantinos, Vassilevski Konstantin V., Stavrinidis Antonis, Konstantinidis Georgios, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyré Hervé, Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis, Dimitrios

Summarization: Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtaine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4037::6e5d5055871c45079c733de32ecdbbf6
http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242