Zobrazeno 1 - 10
of 302
pro vyhledávání: '"Vasko, F. T."'
Autor:
Vasko, F. T.
Publikováno v:
J. Appl. Phys. 129, 204301 (2021)
The 2D electrons trapped in vacuum near the atomically thin dielectric (ATD, mono- or $N$-layer film of $h$-BN or transition metal dichalcogenide) are considered. ATD is suspended above the back gate and forms the capacitor which is controlled by the
Externí odkaz:
http://arxiv.org/abs/2103.10424
Autor:
Vasko, F. T.
We consider dissipative dynamics of a flux qubit caused by 1/f noises, which act both on the shunting LC-contour and on the SQUID loop. These classical Gaussian noises modulate of the level splitting and of the tunnel coupling, respectively, and they
Externí odkaz:
http://arxiv.org/abs/1710.09530
Autor:
Vasko, F. T.
Publikováno v:
Phys. Rev. Applied 8, 024003 (2017)
We study a superconducting transmission line (TL) formed by distributed LC oscillators and excited by external magnetic fluxes which are aroused from random magnetization (A) placed in substrate or (B) distributed at interfaces of a two-wire TL. Low-
Externí odkaz:
http://arxiv.org/abs/1704.03408
We propose qubits based on shallow donor electron spins in germanium. Spin-orbit interaction for donor spins in germanium is in many orders of magnitude stronger than in silicon. In a uniform bulk material it leads to very short spin lifetimes. Howev
Externí odkaz:
http://arxiv.org/abs/1409.6285
Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast lateral spr
Externí odkaz:
http://arxiv.org/abs/1307.3792
Autor:
Vasko, F. T.
The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage dependencies of conce
Externí odkaz:
http://arxiv.org/abs/1301.0966
Autor:
Vasko, F. T.
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneli
Externí odkaz:
http://arxiv.org/abs/1212.1847
Publikováno v:
Physical Review B 86, 235424 (2012)
The absorption of heavily doped graphene in the terahertz (THz) and mid-infrared (MIR) spectral regions is considered taking into account both the elastic scattering due to finite-range disorder and the variations of concentration due to long-range d
Externí odkaz:
http://arxiv.org/abs/1210.6304
Autor:
Vasko, F. T., Mitin, V. V.
Publikováno v:
Appl. Phys. Lett. 101, 151115 (2012)
The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of ca
Externí odkaz:
http://arxiv.org/abs/1210.0632
Autor:
Vasko, F. T., Mitin, V. V.
Publikováno v:
Physical Review B 85, 235321 (2012)
Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Green's function of electron is governed by the Dyson equation with the self-energy function which is determined th
Externí odkaz:
http://arxiv.org/abs/1206.5418