Zobrazeno 1 - 10
of 182
pro vyhledávání: '"Vasilyev, Yu."'
The screening problem for the Coulomb potential of a charge located in a two-dimensional (2D) system has an intriguing solution with a power law distance screening factor due to out-of-plane electrical fields. This is crucially different from a three
Externí odkaz:
http://arxiv.org/abs/2407.16579
Autor:
Vasilyev, Yu. B., Vasileva, G. Yu., Novikov, S., Tarasenko, S. A., Danilov, S. N., Ganichev, S. D.
We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial
Externí odkaz:
http://arxiv.org/abs/1711.03803
Autor:
Vasileva, G. Yu., Smirnov, D., Vasilyev, Yu. B., Nestoklon, M. O., Averkiev, N. S., Novikov, S., Kaya, I. I., Haug, R. J.
Publikováno v:
Appl. Phys. Lett. 110, 113104 (2017)
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on tempera
Externí odkaz:
http://arxiv.org/abs/1612.04222
Autor:
Smirnov, D., Vasileva, G. Yu., Rode, J. C., Belke, C., Vasilyev, Yu. B., Ivanov, Yu. L., Haug, R. J.
The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes
Externí odkaz:
http://arxiv.org/abs/1605.03465
Autor:
Vasileva, G. Yu., Smirnov, D., Ivanov, Yu. L., Vasilyev, Yu. B., Alekseev, P. S., Dmitriev, A. P., Gornyi, I. V., Kachorovskii, V. Yu., Titov, M., Narozhny, B. N., Haug, R. J.
Publikováno v:
Phys. Rev. B 93, 195430 (2016)
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of
Externí odkaz:
http://arxiv.org/abs/1512.00667
Autor:
Vasileva, G. Yu., Alekseev, P. S., Vasilyev, Yu. B., Ivanov, Yu. L., Smirnov, D., Schmidt, H., Haug, R. J.
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic sub-linear con
Externí odkaz:
http://arxiv.org/abs/1508.04009
Autor:
Ludwig, J., Vasilyev, Yu. B., Mikhailov, N. N., Poumirol, J. M., Jiang, Z., Vafek, O., Smirnov, D.
We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ depe
Externí odkaz:
http://arxiv.org/abs/1310.5036
Autor:
Vasilyev, Yu. B.1 (AUTHOR) yu.vasilyev@mail.ioffe.ru
Publikováno v:
Semiconductors. May2023, Vol. 57 Issue 5, p272-274. 3p.
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics; Jun2023, Vol. 87 Issue 6, p845-848, 4p
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):5150-5152