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pro vyhledávání: '"Vasil'ev, Peter P"'
For the visualization of quantum states, the approach based on Wigner functions can be very effective. Homodyne detection has been extensively used to obtain the density matrix, Wigner functions and tomographic reconstructions of optical fields for m
Externí odkaz:
http://arxiv.org/abs/1911.10156
Optical interconnects play a key role in the implementation of high-speed short-reach communication links within high-performance electronic systems. Multimode polymer waveguides in particular are strong candidates for use in passive optical backplan
Externí odkaz:
http://arxiv.org/abs/1701.00846
Autor:
Chen, Jian, Bamiedakis, Nikolaos, Vasil'ev, Peter P., Edwards, Tom J., Brown, Christian T. A., Penty, Richard V., White, Ian H.
Publikováno v:
Journal of Lightwave Technology, Vol. 34, Issue. 12 (2015)
Optical interconnects have attracted significant research interest for use in short-reach board-level optical communication links in supercomputers and data centres. Multimode polymer waveguides in particular constitute an attractive technology for o
Externí odkaz:
http://arxiv.org/abs/1612.01574
Publikováno v:
Optical Fiber Communication Conference (OFC), paper W1E.3, 2016
Dispersion studies demonstrate that waveguide layout can be used to enhance the bandwidth performance of multimode polymer waveguides for use in board-level optical interconnects, providing >40 GHzxm without the need for any launch conditioning.
Externí odkaz:
http://arxiv.org/abs/1611.02723
This paper reports the observation of ultra-superluminal pulse propagation in GaAs/AlGaAs multiple contact heterostuctures in a superradiant emission regime, and shows definitively that it is a different class of emission from conventional spontaneou
Externí odkaz:
http://arxiv.org/abs/1508.05800
Akademický článek
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Autor:
Smetanin, Igor V., Vasil'ev, Peter P.
A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are re
Externí odkaz:
http://arxiv.org/abs/1201.2804
Publikováno v:
Optics Express, Vol. 19 (2011), 17114-17120
Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by s
Externí odkaz:
http://arxiv.org/abs/1104.3336
Autor:
Vasil'ev, Peter P., Smetenin, Igor V.
It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole pairs wit
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603461
Autor:
Vasil'ev, Peter
A mechanism of the condensation of e-h pairs in bulk GaAs at room temperature, which has been observed earlier, is proposed. The point is that the photon assisted pairing happens in a system of electrons and holes that occupy energy levels at the ver
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310341