Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vasantha Pathirana"'
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Amador Pérez-Tomás, Qin Ze Cao, Vish Al Shah, Yeganeh Bonyadi, Vasantha Pathirana, Tanya Trajkovic, G.W.C. Baker, Phillip A. Mawby, Peter M. Gammon
Publikováno v:
Materials Science Forum. 1062:190-194
A systematic study is presented into the impact of a P2O5 surface passivation treatment, carried out prior to the deposition of a high refactory metal contact to 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those diodes
Autor:
Arne Benjamin Renz, Vishal Ajit Shah, Oliver James Vavasour, Guy William Clarke Baker, Yegi Bonyadi, Yogesh Sharma, Vasantha Pathirana, Tanya Trajkovic, Phil Mawby, Marina Antoniou, Peter Michael Gammon
The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::556b1adc6614b592bef9071cab933c32
http://wrap.warwick.ac.uk/161054/1/WRAP-The-optimization-3.3-kV-4H-SiC-JBS-diodes-2022.pdf
http://wrap.warwick.ac.uk/161054/1/WRAP-The-optimization-3.3-kV-4H-SiC-JBS-diodes-2022.pdf
Autor:
Mingchao Gao, Rui Jin, Vasantha Pathirana, Chunwa Chan, Nishad Udugampola, Tanya Trajkovic, Florin Udrea
Publikováno v:
Japanese Journal of Applied Physics. 61:054001
A termination design which efficiently reduces leakage current and improves robustness of very high voltage insulated gate bipolar transistors (IGBTs) (>3.3 kV) without adversely affecting other device characteristics is presented here. Proposed desi
Publikováno v:
Information Sciences. 150:59-75
Chaos offers several advantages to the Engineer over other non-chaotic dynamics. One is that chaotic systems are often significantly easier to control than other linear or non-linear systems, requiring only small, appropriately timed perturbations to