Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Vas. P. Kunets"'
Autor:
Gregory J. Salamo, Jiang Wu, Vas. P. Kunets, Mourad Benamara, C. S. Furrow, Vanga R. Reddy, Michael K. Yakes, M. O. Manasreh, S. Lee, B. D. Weaver
Publikováno v:
Materials Letters. 65:3605-3608
Photoluminescence enhancement due to dipole field from gold nanoparticles was observed at 77 K for GaAs capped InAs quantum dots. The gold nanoparticles were coupled to the surface of the cap layer by using dithiol ligands. The enhancement was invest
Autor:
Vas. P. Kunets, Gregory J. Salamo, Y. Z. Xie, Martin Schmidbauer, Yu. I. Mazur, Petr M. Lytvyn, Zh. M. Wang, Vitaliy G. Dorogan, Marcio D. Teodoro
Publikováno v:
Materials Letters. 65:1427-1430
Highly ordered three-dimensional periodic arrays of In 0.40 Ga 0.60 As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photolum
Coherent exciton–surface plasmon polariton interactions in hybrid metal semiconductor nanostructures
Autor:
Gregory J. Salamo, Eric G. Johnson, Parinda Vasa, R. Pomraenke, Erich Runge, Christoph Lienau, S. Schwieger, Yu. I. Mazur, Pradeep Srinivasan, Vas. P. Kunets
Publikováno v:
physica status solidi c. 6:466-469
We report on an experimental study of the optical properties of a metal-semiconductor hybrid structure consisting of a gold grating on a GaAs quantum well (QW). Our experiments reveal a coherent coupling between the surface plasmon polaritons (SPP) e
Autor:
T. Al. Morgan, William Ted Masselink, Vas. P. Kunets, D. Guzun, Yu. I. Mazur, J. Dobbert, Gregory J. Salamo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:797-800
The generation-recombination noise in doped-channel In0.53Ga0.47As/In0.52Al0.48As/InP micro-Hall devices is characterized using deep level noise spectroscopy. Three noise sources are detected with trap energies of 140, 170 and 40 meV respectively. Th
Autor:
Yu. I. Mazur, V. V. Strelchuk, Gregory J. Salamo, Zh. M. Wang, V. P. Kladko, M. V. Slobodian, A. F. Kolomys, Vas. P. Kunets
Publikováno v:
Journal of Electronic Materials. 36:1555-1561
Molecular beam epitaxy growth of multilayer In x Ga1-x As/GaAs(001) structures with low indium content (x = 0.20–0.35) was studied by X-ray diffraction and photoluminescence in order to understand the initial stage of strain-driven island formation
Autor:
Gregory J. Salamo, Baolai Liang, Zh. M. Wang, W. Black, Yu. I. Mazur, Jihoon Lee, Vas. P. Kunets
Publikováno v:
Nanotechnology. 17:2275-2278
Self-organized InGaAs quantum dot chains grown by molecular beam epitaxy were investigated using vertical stacking techniques on pre-patterned GaAs(100) substrates. The results demonstrate the formation of quantum dot (QD) chains only on desired spat
Publikováno v:
Semiconductors. 36:219-223
A temperature dependence of the optical energy gap Eg(T) for the CdSxSe1−x quantum dots synthesized in a borosilicate glass matrix was investigated in the range of 4.2–500 K. It was demonstrated that this dependence reproduced the dependence Eg(T
Autor:
H. Kissel, Vas. P. Kunets, Georgiy G. Tarasov, S. R. Lavoric, C. Walther, Yu. I. Mazur, Z. Ya. Zhuchenko, William Ted Masselink, M. Ya. Valakh, Uwe Müller
Publikováno v:
Semiconductor Science and Technology. 15:1035-1038
The dependence of disorder on InyGa1-yAs thickness in pseudomorphic strained-layer AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by means of photoluminescence (PL) and Raman scattering. PL and Raman data indicate that, for both y = 0.10 and
Autor:
Christoph Lienau, Vas. P. Kunets, J. E. Kihm, Erich Runge, S. Schwieger, Parinda Vasa, Yu. I. Mazur, Pradeep Srinivasan, Gregory J. Salamo, Eric G. Johnson, Dai-Sik Kim, R. Pomraenke
Publikováno v:
Physical review letters. 101(11)
We report measurements of a coherent coupling between surface plasmon polaritons (SPP) and quantum well excitons in a hybrid metal-semiconductor nanostructure. The hybrid structure is designed to optimize the radiative exciton-SPP interaction which i
Autor:
Pradeep Srinivasan, Erich Runge, Christoph Lienau, Gregory J. Salamo, Eric G. Johnson, Vas. P. Kunets, S. Schwieger, Parinda Vasa, Yu. I. Mazur, R. Pomraenke
Publikováno v:
2007 International Workshop on Physics of Semiconductor Devices.
We report an experimental study of the coherent coupling between Surface Plasmon Polaritons (SPPs) and Quantum Well (QW) excitons in a hybrid metal- semiconductor nanostructure, consisting of a gallium arsenide quantum well placed in a close proximit