Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Varvara Brackmann"'
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The estimation of line and contour geometries from real SEM images is a challenging problem due to the corruption of such images by Poisson noise, edge effects, and other SEM artifacts. We attempt simultaneous contour edge image prediction and SEM im
Publikováno v:
ECS Meeting Abstracts. :923-923
Publikováno v:
Journal of Analytical Atomic Spectrometry. 32:354-366
Two commonly used discharge cells (Grimm type and hollow cathode) were studied and compared in respect of their analytical capabilities. Semiconductive (silicon, silicon carbide, gallium nitride) and nonconductive (quartz and alumina) samples were co
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019).
The result of electron beam lithography is influenced by many effects: forward and backward scattering, formation of secondary electrons, re-scattering of electrons, chemicals diffusion in the resist material, wafer stack, etc. To achieve high resolu
Autor:
Anja Scheu, Rutger Schlatmann, P. Reyes-Figueroa, Thomas Unold, Christian A. Kaufmann, Karsten Prietzel, Dieter Greiner, Volker Hoffmann, Varvara Brackmann, Tim Kodalle, Tobias Bertram, Daniel Abou-Ras
Determining elemental distributions dependent on the thickness of a sample is of utmost importance for process optimization in different fields e.g. from quality control in the steel industry to controlling doping profiles in semiconductor labs. Glow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::235e82ef02c7c7940b6103ab8fd1f979
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=99490
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=99490
Autor:
Michael P. M. Jank, Norbert Hanisch, Varvara Brackmann, Tarek Ali, Shawn Sanctis, Martin Ellinger, Konrad Seidel, Songrui Li, Matthias Rudolph, Thomas Kampfe, Konstantin Mertens, David Lehninger, Kati Biedermann, Maximilian Lederer, Ricardo Olivio
Publikováno v:
Advanced Electronic Materials. 7:2100082
Publikováno v:
ECS Meeting Abstracts. :1385-1385
Motivation: Plasma etching of low-k and ultra low-k (ULK) dielectric materials have seen a tremendous growth in deep nanoscale applications. Fluorocarbon based gases are the forerunners in etching low-k dielectrics as they are the F suppliers necessa
Autor:
Arne Helth, Lars Giebeler, Julio J. Gutierrez Moreno, Varvara Brackmann, Christina E. Lekka, Annett Gebert, Mariana Calin, Matthias Bönisch, Reinhard Schnettler, Thomas Gemming, Jürgen Eckert
Publikováno v:
Journal of the Mechanical Behavior of Biomedical Materials. 39:162-174
Recent developments showed that β-type Ti-Nb alloys are good candidates for hard tissue replacement and repair. However, their elastic moduli are still to be further reduced to match Young׳s modulus values of human bone, in order to avoid stress sh
Autor:
Arne Helth, Horst Wendrock, Alexander Kauffmann, Volker Hoffmann, Jürgen Thomas, Jürgen Eckert, Jens Freudenberger, Varvara Brackmann, Thomas Gemming
Publikováno v:
Materials Characterization. 91:76-88
In order to reveal the true microstructure of a sample one must often go through tedious and time-consuming surface preparation steps. The most abundant ones are polishing and etching using hazardous chemicals. Sputtering in the glow discharge (GD) l
Autor:
Volker Hoffmann, Angus Rockett, Raquel Caballero, Thomas Wirth, Oana Cojocaru-Mirédin, Denis Klemm, Varvara Brackmann, Tim Nunney, Cornel Venzago, Christian A. Kaufmann
Publikováno v:
Advanced Characterization Techniques for Thin Film Solar Cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a98d21e0014e9c1e1c06c7711189975
https://doi.org/10.1002/9783527699025.ch19
https://doi.org/10.1002/9783527699025.ch19