Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Varun G. Nair"'
Publikováno v:
Semiconductors. 55:363-372
Copper zinc tin sulphide (CZTS) thin films have been deposited on glass substrate at 323 ± 5 K using sequential ionic layer adsorption reaction (SILAR). The number of SILAR cycles required for optimum crystalline quality CZTS thin films was optimize
Autor:
Varun G. Nair, Magdalena Birowska, Dominika Bury, Michał Jakubczak, Andreas Rosenkranz, Agnieszka M. Jastrzębska
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(23)
2D MBenes, early transition metal borides, are a very recent derivative of ternary or quaternary transition metal boride (MAB) phases and represent a new member in the flatland. Although holding great potential toward various applications, mainly the
Publikováno v:
Journal of Electronic Materials. 48:3069-3077
An undemanding and cost-effective low-temperature sequential ionic layer adsorption reaction process has been used to synthesize cadmium sulfide (CdS) thin films on glass substrates. The as-deposited films were photoconductive in nature with a photos
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
ZnO-ZnO/CuO-CuO heterostuctures were grown on flexible copper substrate at room temperature using spin coating technique. The XRD analysis of CuO over flexible Copper substrates shows diffraction peaks at (1 1 -1) and (1 1 1) planes. Optical studies
Publikováno v:
Materials Chemistry and Physics. 180:149-155
Using sequential ionic layer adsorption reaction technique, Cupric Oxide (CuO) thin films were deposited on a glass substrate at relatively low bath temperature of 338 ± 5 K. The as deposited films were polycrystalline in nature with preferential or
Publikováno v:
Materials Research Express. 6:1250d9
Autor:
Varun G Nair, R. Jayakrishnan
Publikováno v:
2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT).
A thin layer of p-type Cu 2 O was grown over flexible 30 μm thick copper substrates. Using Injection Chemical Vapor Deposition technique, n-type In 2 S 3 thin films was grown over the Cu 2 O layer. A p-n junction was thus realized. The Cu 2 O/In 2 S
Publikováno v:
Journal of Semiconductors. 39:033002
Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junc