Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Varley, Joel B"'
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying t
Externí odkaz:
http://arxiv.org/abs/2306.06229
Autor:
Ratcliff, Laura E., Oshima, Takayoshi, Nippert, Felix, Janzen, Benjamin M., Kluth, Elias, Goldhahn, Rüdiger, Feneberg, Martin, Mazzolini, Piero, Bierwagen, Oliver, Wouters, Charlotte, Nofal, Musbah, Albrecht, Martin, Swallow, Jack E. N., Jones, Leanne A. H., Thakur, Pardeep K., Lee, Tien-Lin, Kalha, Curran, Schlueter, Christoph, Veal, Tim D., Varley, Joel B., Wagner, Markus R., Regoutz, Anna
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of appli
Externí odkaz:
http://arxiv.org/abs/2205.04412
Autor:
Mu, Sai, Wang, Mengen, Varley, Joel B., Lyons, John L., Wickramaratne, Darshana, Van de Walle, Chris G.
Publikováno v:
Physical Review B 105, 155201(2022)
We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transiti
Externí odkaz:
http://arxiv.org/abs/2111.07194
Publikováno v:
Journal of Applied Physics; 4/14/2024, Vol. 135 Issue 14, p1-11, 11p
Autor:
Swallow, Jack E. N., Vorwerk, Christian, Mazzolini, Piero, Vogt, Patrick, Bierwagen, Oliver, Karg, Alexander, Eickhoff, Martin, Schörmann, Jörg, Wagner, Markus R., Roberts, Joseph W., Chalker, Paul R., Smiles, Matthew J., Murgatroyd, Philip A. E., Razek, Sara A., Lebens-Higgins, Zachary W., Piper, Louis F. J., Jones, Leanne A. H., Thakur, Pardeep Kumar, Lee, Tien-Lin, Varley, Joel B., Furthmüller, Jürgen, Draxl, Claudia, Veal, Tim D., Regoutz, Anna
Publikováno v:
Chemistry of Materials 32, 8460 2020
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental p
Externí odkaz:
http://arxiv.org/abs/2005.13395
Autor:
Karjalainen, Antti, Prozheeva, Vera, Simula, Kristoffer, Makkonen, Ilja, Callewaert, Vincent, Varley, Joel B., Tuomisto, Filip
Publikováno v:
Physical Review B 102, 195207 (2020)
We report a systematic first principles study on positron annihilation parameters in the $\beta$-Ga$_2$O$_3$ lattice and Ga mono-vacancy defects complemented with orientation-dependent experiments of the Doppler broadening of the positron-electron an
Externí odkaz:
http://arxiv.org/abs/2005.06283
Autor:
Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, Lynn, Kelvin
N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect me
Externí odkaz:
http://arxiv.org/abs/2001.11187
Autor:
Nardone, Marco, Patikirige, Yasas, Kweon, Kyoung E., Walkons, Curtis, Friedlmeier, Theresa Magorian, Varley, Joel B., Lordi, Vincenzo, Bansal, Shubhra
Publikováno v:
Phys. Rev. Applied 13, 024025 (2020)
Temporal variations of Cu(In,Ga)Se$_2$ photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and
Externí odkaz:
http://arxiv.org/abs/1911.04353
Autor:
Johnson, Jared M., Chen, Zhen, Varley, Joel B., Jackson, Christine M., Farzana, Esmat, Zhang, Zeng, Arehart, Aaron R., Huang, Hsien-Lien, Genc, Arda, Ringel, Steven A., Van de Walle, Chris G., Muller, David A., Hwang, Jinwoo
Publikováno v:
Phys. Rev. X 9, 041027 (2019)
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of
Externí odkaz:
http://arxiv.org/abs/1907.00563
Autor:
Sharma, Shubham, Zagalskaya, Alexandra, Weitzner, Stephen E., Eggart, Lisa, Cho, Seongkoo, Hsu, Tim, Chen, Xiao, Varley, Joel B., Alexandrov, Vitaly, Orme, Christine A., Pham, Tuan Anh, Wood, Brandon C.
Publikováno v:
In Electrochimica Acta 1 January 2023 437