Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Variam, N."'
Publikováno v:
IndraStra Global.
The plasma assisted As doping (PLAD) technique is used to demonstrate multiple flatband voltages (multi-V-fb) on TiN/HfO2 Ge gate stacks for n-FinFET applications. Through detailed studies with varying doses, implant energies, and TiN cap thicknesses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::43c42167e4ed249e4a8ef4336bacd8a8
Akademický článek
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Publikováno v:
EMRS 2001 Spring Meeting, June 5-8, 2001, Strasbourg, France, Symposium B: Defect Engineering of Advanced Semiconductor Devices
The properties of advanced CMOS transistors are strongly influenced by the dopant distribution in the transition region between the source (drain) and the channel. The tailoring of this distribution is achieved by appropriate halo and extension impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::166f01e61583472e06819c8c3571f34c
https://www.hzdr.de/publications/Publ-4031-1
https://www.hzdr.de/publications/Publ-4031-1
Autor:
Variam, N., Jeong, U., Falk, S., Mehta, S., Posselt, M., Feudel, T., Horstmann, M., Krüger, C., Ng, C.-H.
Publikováno v:
13th International Conference on Ion Implantation Technology, Alpbach, Austria, September 17-22, 2000
Proc. 2000 Int. Conf. on Ion Implantation Technology, Alpbach, Austria, September 17-22, eds.: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig, IEEE, Piscataway, USA, 2000, IEEE Publications 00EX432, p. 42
Proc. 2000 Int. Conf. on Ion Implantation Technology, Alpbach, Austria, September 17-22, eds.: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig, IEEE, Piscataway, USA, 2000, IEEE Publications 00EX432, p. 42
Informations can be requested. Email: M.Posselt@fz-rossendorf.de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::211ace775458fd28983f1b5656d2daf6
https://www.hzdr.de/publications/Publ-3530-1
https://www.hzdr.de/publications/Publ-3530-1
Autor:
Rao, K. V., Khaja, F. A., Ni, C. N., Muthukrishnan, S., Darlark, A., Lei, J., Peidous, I., Brand, A., Henry, T., Variam, N., Erokhin, Y.
Publikováno v:
AIP Conference Proceedings; Nov2012, Vol. 1496 Issue 1, p46-49, 4p
Autor:
Shao-Ming Koh, Chee-Mang Ng, Pan Liu, Zhi-Qiang Mo, Xincai Wang, Hongyu Zheng, Zhi-Yong Zhao, Variam, N., Henry, T., Erokhin, Yu., Samudra, G.S., Yee-Chia Yeo
Publikováno v:
2010 International Workshop on Junction Technology (IWJT); 2010, p1-4, 4p
Autor:
Huet, K., Boniface, C., Fisicaro, G., Desse, F., Variam, N., Erokhin, Y., La Magna, A., Privitera, V., Schuhmacher, M., Besaucele, H., Venturing, J.
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors; 2009, p1-16, 16p
Autor:
Huet, K., Lin, R., Boniface, C., Desse, F., Petersen, D.H., Hansen, O., Variam, N., La Magna, A., Schuhmacher, M., Jensen, A., Nielsen, P.F., Besaucele, H., Venturing, J.
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors; 2009, p1-19, 19p
Autor:
Tan, C. F., Teo, L. W., Yin, C-S, Lee, J. G., Liu, J., See, A., Zhou, M. S., Quek, E., Chu, S., Hatem, C., Variam, N., Arevalo, E., Gupta, A., Mehta, S.
Publikováno v:
MRS Online Proceedings Library; 2008, Vol. 1070 Issue 1, p1-6, 6p
Publikováno v:
2007 15th International Conference on Advanced Thermal Processing of Semiconductors; 2007, p291-295, 5p