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pro vyhledávání: '"Varad R. Sakhalkar"'
Autor:
Jyothi Ambati, Albert A. Burk, Jeff Seaman, Chris Horton, Sumit Gangwal, Jianqiu Guo, Elif Balkas, Michael Dudley, Adrian Powell, Yuri I. Khlebnikov, Joseph John Sumakeris, Michael James Paisley, Valeri F Tsevtkov, R.T. Leonard, Andy McClure, M. O’Loughlin, Olek Kramarenko, Eugene Deyneka, Varad R. Sakhalkar
Publikováno v:
Materials Science Forum. 858:5-10
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053b3c67667a0ddf22a99f7b8b86f646
https://doi.org/10.4028/www.scientific.net/msf.858.5
https://doi.org/10.4028/www.scientific.net/msf.858.5
