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of 10
pro vyhledávání: '"Vara Prasad Jonnalagadda"'
Autor:
Valeria Bragaglia, Vara Prasad Jonnalagadda, Marilyne Sousa, Syed Ghazi Sarwat, Benedikt Kersting, Abu Sebastian
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1702 (2022)
Non-volatile memories based on phase-change materials have gained ground for applications in analog in-memory computing. Nonetheless, non-idealities inherent to the material result in device resistance variations that impair the achievable numerical
Externí odkaz:
https://doaj.org/article/161f94a971f942d4b3b307aa3848c1c8
Autor:
Syed Ghazi Sarwat, Manuel Le Gallo, Robert L Bruce, Kevin Brew, Benedikt Kersting, Vara Prasad Jonnalagadda, Injo Ok, Nicole Saulnier, Matthew BrightSky, Abu Sebastian
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Nanoscale resistive memory devices are being explored for neuromorphic and in-memory computing. However, non-ideal device characteristics of read noise and resistance drift pose significant challenges to the achievable computational precision. Here,
Autor:
Abu Sebastian, Vara Prasad Jonnalagadda, Iason Giannopoulos, Evangelos Eleftheriou, Manuel Le Gallo
Publikováno v:
AICAS
2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS)
2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS)
The explosive growth in data-centric artificial intelligence related applications necessitates exploration of non-von Neumann computing paradigms such as in-memory computing. The ability to perform certain computational tasks within the memory unit w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d6fa92c20dd41fe16a1b9a978ba7176
https://zenodo.org/record/5301190
https://zenodo.org/record/5301190
Autor:
Syed Ghazi Sarwat, Benedikt Kersting, Timoleon Moraitis, Vara Prasad Jonnalagadda, Abu Sebastian
Publikováno v:
Nature Nanotechnology
In the mammalian nervous system, various synaptic plasticity rules act, either individually or synergistically, over wide-ranging timescales to enable learning and memory formation. Hence, in neuromorphic computing platforms, there is a significant n
Autor:
Manuel Le Gallo, Abu Sebastian, Valeria Bragaglia, Vara Prasad Jonnalagadda, Marilyne Sousa, Vladimir Ovuka, Syed Ghazi Sarwat, Martin Salinga, Benedikt Kersting
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Phase change memory (PCM) is being actively explored for in-memory computing and neuromorphic systems. The ability of a PCM device to store a continuum of resistance values can be exploited to realize arithmetic operations such as matrix-vector multi
Autor:
Ider Ronneberger, Abu Sebastian, Iason Giannopoulos, Vara Prasad Jonnalagadda, Manuel Le Gallo, Benedikt Kersting, Xuan Thang Vu, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Martin Salinga
Publikováno v:
Nature Materials
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74c465a08b95132e42819983ebad5307
http://arxiv.org/abs/1902.00254
http://arxiv.org/abs/1902.00254
Autor:
Abhairaj Singh, Vara Prasad Jonnalagadda, Manuel Le Gallo, Abu Sebastian, Said Hamdioui, Iason Giannopoulos
Publikováno v:
Advanced Intelligent Systems
Advanced Intelligent Systems, 2 (12)
Advanced Intelligent Systems, 2 (12)
In recent years, several in-memory logic primitives were proposed where bit-wise logical operations are performed in memory by exploiting the physical attributes of memristive devices organized in a crossbar array. However, a convincing real-world ap
Autor:
Evangelos Eleftheriou, Vara Prasad Jonnalagadda, Claudia Santini, Chiara Marchiori, Laurent Dellmann, W.W. Koelmans, C. Rossel, Abu Sebastian, Marta D. Rossell
Publikováno v:
Nature Communications. 6
Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has bee
Autor:
Vara Prasad Jonnalagadda, W.W. Koelmans, Abu Sebastian, Laurent Dellmann, Evangelos Eleftheriou, Daniel Krebs
Publikováno v:
Nature Communications
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges
Autor:
Valeria Bragaglia, Vara Prasad Jonnalagadda, Marilyne Sousa, Syed Ghazi Sarwat, Benedikt Kersting, Abu Sebastian
Publikováno v:
Nanomaterials; Volume 12; Issue 10; Pages: 1702
Non-volatile memories based on phase-change materials have gained ground for applications in analog in-memory computing. Nonetheless, non-idealities inherent to the material result in device resistance variations that impair the achievable numerical