Détermination des paramètres limitant la montée des MOSFETs sub-100nm

Autor: Vanmackelberg, M., Lepilliet, S., Raynaud, C., Dehan, M., Dambrine, G.

Publikováno v: Actes des 13èmes Journées Nationales Microondes, JNM 2003

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::26b4b9298d6db74407a789f5b800aa66
https://hal.science/hal-00145999

A new empirical non-linear model for SOI MOSFET

Autor: Siligaris, A., Vanmackelberg, M., Dambrine, G., Vellas, N., Danneville, F.

Publikováno v: Proceedings of the 10th European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2002
Siligaris, Alexandre ; Vanmackelberg, Matthieu ; Dambrine, G. ; Vellas, Nicolas ; Danneville, F. (2002) A New Empirical Non-linear Model for SOI MOSFET. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high frequency circuit design is presented. An original close form expression is proposed for the drain current and charge conservation is taken into account, as capa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fbcbc2e00e42377260776a09a4e9655
https://hal.archives-ouvertes.fr/hal-00147833

Les MOS en technologie SOI pour des applications hyperfréquences : partially depleted or fully depleted ?

Autor: Vanmackelberg, M., Raynaud, C., Raskin, J.P., Bracale, A., Jomaah, J., Dambrine, G.

Publikováno v: Actes des 12èmes Journées Nationales Microondes, JNM 2001
Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7c2fa960ccfc6763238d4bd46b30aa7d
https://hal.science/hal-00152012

70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications

Autor: Raynaud, C., Faynot, O., Pelloie, J.-L., Tabone, C., Grouillet, A., Martin, F., Dambrine, G., Vanmackelberg, M., Picheta, L., Mackowiak, E., Brut, H., Llinares, P., Sevenhans, J., Compagne, E., Fletcher, G., Flandre, D., Dessard, V., Vanhoenacker, D., Raskin, J.-P.

Publikováno v: Raynaud, C. ; Faynot, O. ; Pelloie, J.-L. ; Tabone, C. ; Grouillet, A. ; Martin, F. ; Dambrine, G. ; Vanmackelberg, M. ; Picheta, L. ; Mackowiak, E. ; Brut, H. ; Llinares, P. ; Sevenhans, J. ; Compagne, E. ; Fletcher, G. ; Flandre, D. ; Dessard, V. ; Vanhoenacker, D. ; Raskin, J.-P. (2000) 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

For the first time, excellent microwave performances including high frequency noise are ported for 0.25 micron gate channel length Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFET’s: a maximum extrapolated oscillation frequency (fmax) of 70 GH

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0257ec43ec55b925305eb7b4045cf272

Impact of down scaling on high-frequency noise performance of bulk and SOI MOSFETs.

Autor: Dambrine, Gilles, Raynaud, C., Vanmackelberg, M., Danneville, Francois, Pailloncy, Guillaume, Lepilliet, Sylvie, Raskin, Jean Pierre

Publikováno v: Proceedings of SPIE; Nov2003, Issue 1, p105-119, 15p