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pro vyhledávání: '"Vanessa Rizzato"'
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
Autor:
Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Maria Ruzzarin, Matteo Meneghini, Andrea Favaron, Enrico Zanoni, Vanessa Rizzato, Gaudenzio Meneghesso, Denis Marcon, Isabella Rossetto, Stefaan Decoutere, Steve Stoffels
This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By means of combined DC and spectral analysis we demonstrate the following results: (i) the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7198fb77c21830063ddd42ae668e70e
http://hdl.handle.net/11577/3223824
http://hdl.handle.net/11577/3223824
Autor:
Vanessa Rizzato, Niels Posthuma, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Isabella Rossetto, Stefaan Decoutere, Steve Stoffels, Tian-Li Wu, Marleen Van Hove, Matteo Meneghini
Publikováno v:
Electronics
Electronics; Volume 5; Issue 2; Pages: 14
Electronics; Volume 5; Issue 2; Pages: 14
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de089e4642917ef945037db086a25a14
