Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Vandroux, L."'
Publikováno v:
In Microelectronic Engineering July 2013 107:178-183
Autor:
Paviet-Salomon, B., Gall, S., Monna, R., Manuel, S., Slaoui, A., Vandroux, L., Hida, R., Dechenaux, S.
Publikováno v:
In Energy Procedia 2011 8:700-705
Autor:
Fayolle, M., Pontcharra, J., Dijon, J., Fournier, A., Okuno, H., Quesnel, E., Muffato, V., Jayet, C., Lugand, J.F., Gautier, P., Vandroux, L., Huet, S., Grampeix, H., Yckache, K., Mariolle, D., Billon, T.
Publikováno v:
In Microelectronic Engineering 2011 88(5):833-836
Autor:
Loubriat, S., Muyard, D., Fillot, F., Roule, A., Veillerot, M., Barnes, J.P., Gergaud, P., Vandroux, L., Verdier, M., Maitrejean, S.
Publikováno v:
In Microelectronic Engineering 2011 88(5):817-821
Autor:
Molas, G., Colonna, J.P., Kies, R., Belhachemi, D., Bocquet, M., Gély, M., Vidal, V., Brianceau, P., Martinez, E., Papon, A.M., Licitra, C., Vandroux, L., Ghibaudo, G., De Salvo, B.
Publikováno v:
In Solid State Electronics 2011 58(1):68-74
Autor:
Batude, P., Garros, X., Clavelier, L., Le Royer, C., Hartmann, J.M., Loup, V., Besson, P., Vandroux, L., Deleonibus, S., Boulanger, F.
Publikováno v:
In Microelectronic Engineering 2007 84(9):2320-2323
Autor:
Cosnier, V., Besson, P., Loup, V., Vandroux, L., Minoret, S., Cassé, M., Garros, X., Pedini, J-M., Lhostis, S., Dabertrand, K., Morin, C., Wiemer, C., Perego, M., Fanciulli, M.
Publikováno v:
In Microelectronic Engineering 2007 84(9):1886-1889
Publikováno v:
Journal of Applied Physics; Sep2012, Vol. 112 Issue 6, p063501, 7p
Autor:
Batude, P., Garros, X., Clavelier, L., Le Royer, C., Hartmann, J. M., Loup, V., Besson, P., Vandroux, L., Campidelli, Y., Deleonibus, S., Boulanger, F.
Publikováno v:
Journal of Applied Physics; 8/1/2007, Vol. 102 Issue 3, p034514, 8p, 3 Diagrams, 9 Graphs
Autor:
Paviet-Salomon, B., Manuel, S., Gall, S., Monna, R., Slaoui, A., Vandroux, L., Hida, R., Dechenaux, S.
26th European Photovoltaic Solar Energy Conference and Exhibition; 1369-1371
This work aims at investigating phosphorus-doped silicon nitrides layers (SiN:P) as efficient dopant sources to replace the phosphorus silicate glass (PSG) as a subprod
This work aims at investigating phosphorus-doped silicon nitrides layers (SiN:P) as efficient dopant sources to replace the phosphorus silicate glass (PSG) as a subprod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06a84eb104890ab31fd5b1532b5c5c8
