Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Vandana Krishnamurthy"'
Penetrating Abdominal Trauma: Descriptive Analysis of a Case Series from an Indian Metropolitan City
Autor:
Sumathi Nadikuditi, Nachappa Sivanesan Uthraraj, Vandana Krishnamurthy, Karan Kumar, Meghanaprakash Hiriyur Prakash, Laya Manasa Sriraam, Gokul K Shanker Ramasamy, Kannaki Uthraraj Chettiakkapalayam Venkatachalam
Publikováno v:
Cureus.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ebc1be249c7713c097c74a985563753
https://doi.org/10.7759/cureus.32429
https://doi.org/10.7759/cureus.32429
Autor:
Jakub Koza, Caroline Evans, Runhui Huang, Jamie Storie, Vandana Krishnamurthy, Douglas Guerrero
Publikováno v:
Advances in Patterning Materials and Processes XXXIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39782c62e89d647edcb9c459cb974308
https://doi.org/10.1117/12.2628988
https://doi.org/10.1117/12.2628988
Publikováno v:
ECS Transactions. 52:251-257
This paper presents the results of efforts to achieve a very wide processing window lithography using a spin-on trilayer patterning stack. Materials design and processing are based on physical and chemical properties as well as optical field distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f647057d3ce080b5535c34348448dc87
https://doi.org/10.1149/05201.0251ecst
https://doi.org/10.1149/05201.0251ecst
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC).
It is well known that patterning materials are sensitive to many factors that determine lithography performance. For example, when the same resist is used with various underlayers optimized to the same optical distribution, the different underlayers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c237d3b062e770090ad1098e5a3ee536
https://doi.org/10.1109/cstic.2016.7463971
https://doi.org/10.1109/cstic.2016.7463971
Autor:
Vandana Krishnamurthy, Tantiboro Ouattara, Carlton Washburn, Aline Collin, Douglas J. Guerrero
Publikováno v:
ECS Transactions. 44:215-218
Extreme ultraviolet (EUV) exposure is among the front-runners for single-exposure lithography for the 16-nm node and below. One major issue moving toward production is the source power for EUV, which dictates the throughput of the EUV exposure tools.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6377008220b989ccb995d4b191398e
https://doi.org/10.1149/1.3694319
https://doi.org/10.1149/1.3694319
Publikováno v:
2015 China Semiconductor Technology International Conference.
Of primary importance in lithography is understanding internal molecular forces, characterized by chemical contrast, which, when uncontrolled, can lead to pattern uncertainty and line edge roughness/line width roughness (LER/LWR). Another key to achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b20f43c24f335f59a4f047abba4a83
https://doi.org/10.1109/cstic.2015.7153341
https://doi.org/10.1109/cstic.2015.7153341
Autor:
Yubao Wang, Qin Lin, Sean Simmons, Douglas J. Guerrero, Michael Weigand, Brandy Carr, Vandana Krishnamurthy
Publikováno v:
SPIE Proceedings.
Spin-on carbon (SOC) materials play an important role in the multilayer lithography scheme for the mass production of advanced semiconductor devices. One of the SOC’s key roles in the multilayer process (photoresist, silicon-containing hardmask, SO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ca99b6716efb6e9d3416c2bd762984
https://doi.org/10.1117/12.2011466
https://doi.org/10.1117/12.2011466
Autor:
Douglas J. Guerrero, Michael Weigand, Tantiboro Ouattara, Vandana Krishnamurthy, Aline Collin, Carlton Washburn
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) exposure is among the front-runners for single-exposure lithography for the 16-nm node and below. Previous work has shown that assist layers are critical for performing EUV lithography. Assist layers enhance the adhesion of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc450e1da6b0c1c6a470e89a0a63329
https://doi.org/10.1117/12.916469
https://doi.org/10.1117/12.916469
Publikováno v:
SPIE Proceedings.
The 65nm half pitch node will require 193nm wavelength in combination with NA > 0.9 to keep the kl above 0.3. With such high angles of diffracted light the relative amount of TE (or s) polarization that contributes to image formation increases. Unfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ef13eb4e045b9ca8a094ef54285a5c
https://doi.org/10.1117/12.599988
https://doi.org/10.1117/12.599988
Autor:
Mariya I. Nagatkina, Charles J. Neef, Evan Bryant, Vandana Krishnamurthy, Cheryl Nesbit, Michelle Windsor
Publikováno v:
SPIE Proceedings.
New fast-etching bottom anti-reflective coatings have been prepared at Brewer Science, Inc., for 193-nm lithography. These materials, EXP03087B and EXP03066, were targeted for first and second reflectivity minima thickness, respectively. The optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f2d5a8eee625474283a95d9c547026
https://doi.org/10.1117/12.535423
https://doi.org/10.1117/12.535423