Use of Al 2O 3 as inter-poly dielectric in a production proven 130 nm embedded Flash technology

Autor: Kakoschke, R. ^{a, ⁎}, Pescini, L. ^a, Power, J.R. ^b, van der Zanden, K. ^c, Andersen, E.-O. ^b, Gong, Y. ^b, Allinger, R. ^a

Publikováno v: In Solid State Electronics 2008 52(4):550-556

Low-frequency gate current noise of InP based HEMTs

Autor: Simoen, E. ^{a, *}, van Meer, H. ^a, Valenza, M. ^b, van der Zanden, K. ^a, De Raedt, W. ^a

Publikováno v: In Solid State Electronics 1999 43(9):1797-1800

Real-time measurement of InP HEMT'S during large-signal RF overdrive stress

Autor: Schreurs, D., van der Zanden, K., Verspecht, J., De Raedt, W., Nauwelaers, B.

Publikováno v: Schreurs, D. ; van der Zanden, K. ; Verspecht, J. ; De Raedt, W. ; Nauwelaers, B. (1998) Real-time measurement of InP HEMT'S during large-signal RF overdrive stress. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

We show that the "Nonlinear Network Measurement System" allows to accurately measure the real-time degradation of microwave active devices under large-signal RF overdrive stress. This new kind of measurements gives a better insight in the failure mec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf7a767bb8b9146187ed37aa000e1b6a

Scalable non-linear and bias-dependent LF-noise model for improved InP HEMT based MMIC oscillator design

Autor: Schreurs, D., Meer, van, H., van der Zanden, K., Raedt, de, W., Nauwelaers, B.

Publikováno v: 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO / MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section; with technical co-sponsorship from IEEE Electron Devices Society; in cooperation with IEEE Microwave Theory & Techniques Society ... [et al.];, 187-192
STARTPAGE=187;ENDPAGE=192;TITLE=1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO / MTT/ED/AP/LEO Societies Joint Chapter, United Kingdom and Republic of Ireland Section; with technical co-sponsorship from IEEE Electron Devices Society; in cooperation with IEEE Microwave Theory & Techniques Society ... [et al.]

This paper focuses on two modelling aspects to improve low phase noise MMIC oscillator design. As the modelling of InP based HEMTs has mainly been limited to the representation of the small-signal and thermal noise behaviour, we present a scaleable n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::53f7e0dda1cb60c402657139d4b1db85
https://research.tue.nl/nl/publications/5142a4eb-d38c-4172-8d11-93e97810616f

A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier

Autor: Baeyens, Y., Schreurs, D., Nauwelaers, B., Van der Zanden, K., Van Hove, M., De Raedt, W., Van Rossum, M.

Publikováno v: Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M. (1996) A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode configu­ration is demonstrated by the successful design and realisation of a number of coplanar amplifiers. For a reactively matched single-stage GaAs PHEM

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64369067a8fe79ea59188b5817321972