Zobrazeno 1 - 10
of 791
pro vyhledávání: '"Van de Walle, Chris. G."'
The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates rigorous understanding of its optoelectronic properties. Theoretical predictions of a "pseudo-direct" band gap, characterized by weak osc
Externí odkaz:
http://arxiv.org/abs/2412.08865
Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to lithium niobate, the most widely used nonlinear optical material, wurt
Externí odkaz:
http://arxiv.org/abs/2410.07444
Autor:
Silkinis, Rokas, Žalandauskas, Vytautas, Thiering, Gergő, Gali, Adam, Van de Walle, Chris G., Alkauskas, Audrius, Razinkovas, Lukas
Publikováno v:
Phys.Rev.B 110 (2024) 075303
We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital
Externí odkaz:
http://arxiv.org/abs/2406.10647
Autor:
Yang, Guangcanlan, Wang, Haochen, Mu, Sai, Xie, Hao, Wang, Tyler, He, Chengxing, Shen, Mohan, Liu, Mengxia, Van de Walle, Chris G., Tang, Hong X.
Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength ($K^2$)
Externí odkaz:
http://arxiv.org/abs/2405.07978
Autor:
Pant, Nick, Bushick, Kyle, McAllister, Andrew, Lee, Woncheol, Van de Walle, Chris G., Kioupakis, Emmanouil
Publikováno v:
Appl. Phys. Lett. 125, 021109 (2024)
The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated b
Externí odkaz:
http://arxiv.org/abs/2403.11019
The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence
Externí odkaz:
http://arxiv.org/abs/2402.17291
Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here we present a model that encapsulates the essential physics of coupling
Externí odkaz:
http://arxiv.org/abs/2402.08257
Autor:
Nielsen, Dallin O., Van de Walle, Chris G., Pantelides, Sokrates T., Schrimpf, Ronald D., Fleetwood, Daniel M., Fischetti, Massimo V.
The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical mod
Externí odkaz:
http://arxiv.org/abs/2308.03893
Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multi-phonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here we highlight the role of
Externí odkaz:
http://arxiv.org/abs/2211.08642
Autor:
Uysal, Mehmet T., Raha, Mouktik, Chen, Songtao, Phenicie, Christopher M., Ourari, Salim, Wang, Mengen, Van de Walle, Chris G., Dobrovitski, Viatcheslav V., Thompson, Jeff D.
Publikováno v:
PRX Quantum 4, 010323 (2023)
Individually addressed Er$^{3+}$ ions in solid-state hosts are promising resources for quantum repeaters, because of their direct emission in the telecom band and compatibility with silicon photonic devices. While the Er$^{3+}$ electron spin provides
Externí odkaz:
http://arxiv.org/abs/2209.05631