Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Van Zanten, D."'
Autor:
Krasnikova, Y., Murthy, A. A., Crisa, F., Bal, M., Sung, Z., Lee, J., Cano, A., van Zanten, D. M. T., Romanenko, A., Grassellino, A., Suter, A., Prokscha, T., Salman, Z.
Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Ku
Externí odkaz:
http://arxiv.org/abs/2312.10697
Autor:
Cardani, L., Colantoni, I., Cruciani, A., De Dominicis, F., D'Imperio, G., Laubenstein, M., Mariani, A., Pagnanini, L., Pirro, S., Tomei, C., Casali, N., Ferroni, F., Frolov, D., Gironi, L., Grassellino, A., Junker, M., Kopas, C., Lachman, E., McRae, C. R. H., Mutus, J., Nastasi, M., Pappas, D. P., Pilipenko, R., Sisti, M., Pettinacci, V., Romanenko, A., Van Zanten, D., Vignati, M., Withrow, J. D., Zhelev, N. Z.
Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environme
Externí odkaz:
http://arxiv.org/abs/2211.13597
Autor:
Hertel, A., Eichinger, M., Andersen, L. O., van Zanten, D. M. T., Kallatt, S., Scarlino, P., Kringhøj, A., Chavez-Garcia, J. M., Gardner, G. C., Gronin, S., Manfra, M. J., Gyenis, A., Kjaergaard, M., Marcus, C. M., Petersson, K. D.
Publikováno v:
Phys. Rev. Applied 18, 034042 (2022)
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal
Externí odkaz:
http://arxiv.org/abs/2202.10860
Autor:
Nguyen, H. Q., Sabonis, D., Razmadze, D., Mannila, E. T., Maisi, V. F., van Zanten, D. M. T., O'Farrell, E. C. T., Krogstrup, P., Kuemmeth, F., Pekola, J. P., Marcus, C. M.
Publikováno v:
Phys. Rev. B 108, L041302 (2023)
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charg
Externí odkaz:
http://arxiv.org/abs/2202.05970
Autor:
Hertel, A., Andersen, L. O., van Zanten, D. M. T., Eichinger, M., Scarlino, P., Yadav, S., Karthik, J., Gronin, S., Gardner, G. C., Manfra, M. J., Marcus, C. M., Petersson, K. D.
Publikováno v:
Phys. Rev. Applied 16, 044015 (2021)
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high
Externí odkaz:
http://arxiv.org/abs/2104.03621
Autor:
Corral, A. García, van Zanten, D. M. T., Franke, K. J., Courtois, H., Florens, S., Winkelmann, C. B.
Publikováno v:
Phys. Rev. Research 2, 012065 (2020)
The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrosta
Externí odkaz:
http://arxiv.org/abs/1912.04084
Autor:
van Zanten, D. M. T., Basko, D. M., Khaymovich, I. M., Pekola, J. P., Courtois, H., Winkelmann, C. B.
Publikováno v:
Phys. Rev. Lett. 116, 166801 (2016)
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron
Externí odkaz:
http://arxiv.org/abs/1601.02469
Publikováno v:
Phys. Rev. B 92, 184501 (2015)
Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron transistors in
Externí odkaz:
http://arxiv.org/abs/1506.07695
We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. Th
Externí odkaz:
http://arxiv.org/abs/1304.5381
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