Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics

Autor: Alam, Md Nur K., Clima, S., Kaczer, B., Roussel, Ph., Truijen, B., Ragnarsson, L. - A., Horiguchi, N., Heyns, M., Van Houdt, J.

Existence of quasi-static negative capacitance (QSNC) was proposed from an interpretation of the widely accepted Landau model of ferroelectrics. However, many works showed not to support the QSNC theory, making it controversial. In this letter we sho

Externí odkaz: http://arxiv.org/abs/2404.13138

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility.

Autor: Kwon DS; imec, Kapeldreef 75, 3001 Leuven, Belgium., Bizindavyi J; imec, Kapeldreef 75, 3001 Leuven, Belgium., De G; imec, Kapeldreef 75, 3001 Leuven, Belgium.; KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium., Belmonte A; imec, Kapeldreef 75, 3001 Leuven, Belgium., Delabie A; imec, Kapeldreef 75, 3001 Leuven, Belgium.; KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium., Nyns L; imec, Kapeldreef 75, 3001 Leuven, Belgium., Kar GS; imec, Kapeldreef 75, 3001 Leuven, Belgium., Van Houdt J; imec, Kapeldreef 75, 3001 Leuven, Belgium.; KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium., Popovici MI; imec, Kapeldreef 75, 3001 Leuven, Belgium.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Aug 07; Vol. 16 (31), pp. 41704-41715. Date of Electronic Publication: 2024 Jul 26.

Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT

Autor: Gaur, A., Balaji, Y., Lin, D., Adelmann, C., Van Houdt, J., Heyns, M., Mocuta, D., Radu, I.

Publikováno v: In Microelectronic Engineering 25 June 2017 178:145-149

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Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Autor: Lee, K.H., Degraeve, R., Toledano-Luque, M., Arreghini, A., Breuil, L., Blomme, P., Van den bosch, G., Van Houdt, J.

Publikováno v: In Microelectronic Engineering 1 November 2015 147:45-50