Výsledky vyhledávání - "Van Dinh, Duc"

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Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Autor: Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc, Campbell, Aidan F, John, Philipp, Auzelle, Thomas, Trampert, Achim, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass

Externí odkaz: http://arxiv.org/abs/2410.04206

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ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Autor: John, Philipp, Trampert, Achim, Van Dinh, Duc, Spallek, Domenik, Lähnemann, Jonas, Kaganer, Vladimir, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both su

Externí odkaz: http://arxiv.org/abs/2402.00702

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Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)

Autor: Pristovsek, Markus, van Dinh, Duc, Liu, Ting, Ikarashi, Nobuyuki

Publikováno v: Applied Physics Express. 13(11):111001

We report on a new member of the III-nitride family, wurtzite AlPyN1−y, tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlPyN1−y can be grown between 1050 °C to 1250 °C under hydrogen atmospher

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::3a001838935c32346036da8388f31d7f
https://nagoya.repo.nii.ac.jp/records/31317