Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Van Bael, B. J."'
Autor:
Prance, J. R., Van Bael, B. J., Simmons, C. B., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nanotechnology 26, 215201 (2015)
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme,
Externí odkaz:
http://arxiv.org/abs/1506.02279
Autor:
Simmons, C. B., Prance, J. R., Van Bael, B. J., Koh, Teck Seng, Shi, Zhan, Savage, D. E., Lagally, M. G., Joynt, R., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 106, 156804 (2011)
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quant
Externí odkaz:
http://arxiv.org/abs/1010.5828
Autor:
Thalakulam, Madhu, Simmons, C. B., Van Bael, B. J., Rosemeyer, B. M., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. B 84, 045307 (2011)
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and the
Externí odkaz:
http://arxiv.org/abs/1010.0972
Autor:
Simmons, C. B., Thalakulam, Madhu, Rosemeyer, B. M., Van Bael, B. J., Sackmann, E. K., Savage, D. E., Lagally, M. G., Joynt, R., Friesen, M., Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nano Lett., 2009, 9 (9), pp 3234-3238
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling,
Externí odkaz:
http://arxiv.org/abs/0905.1647
Autor:
Prance, J R, Van Bael, B J, Simmons, C B, Savage, D E, Lagally, M G, Friesen, Mark, Coppersmith, S N, Eriksson, M A
Publikováno v:
Nanotechnology; 3/19/2022, Vol. 33 Issue 12, p1-2, 2p
Akademický článek
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Akademický článek
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Autor:
Simmons, Christie, Prance, J. R., Thalakulam, Madhu, Rosemeyer, B. M., Van Bael, B. J., Savage, Donald E., Lagally, Max G., Joynt, R., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
ECS Transactions; October 2010, Vol. 33 Issue: 6
Autor:
Prance JR; Department of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom., Van Bael BJ; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Simmons CB; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Savage DE; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Lagally MG; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Friesen M; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Coppersmith SN; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America., Eriksson MA; Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, United States of America.
Publikováno v:
Nanotechnology [Nanotechnology] 2021 Dec 28; Vol. 33 (12). Date of Electronic Publication: 2021 Dec 28.