Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vamvoukakis Konstantinos"'
Autor:
Zekentes, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Vassilevski, Konstantin, Horsfall, Alton, Wright, Nick, Brosselard, Pierre, Niu, Shiqin, Lazar, Mihai, Planson, Dominique, Tournier, Dominique, Camara, Nicolas
Publikováno v:
Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
International audience; Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bd394ca9a036b7cb311d3a5a41b32436
https://hal.science/hal-02133681
https://hal.science/hal-02133681
Autor:
Tsagaraki, Katerina, Nafouti, Maher, Peyre, Herve, Vamvoukakis, Konstantinos, Makris, Nikolaos, Kayambaki, Maria, Stavrinidis, Antonis, Konstantinidis, George, Panagopoulou, Marianthi, Alquier, Daniel, Zekentes, Konstantinos
Publikováno v:
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p653-656, 4p
Autor:
Kayambaki, Maria, Vamvoukakis, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kornilios, Nikolaos, Zekentes, Konstantinos
Publikováno v:
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p591-594, 4p
Autor:
Stavrinidis, Antonis, Konstantinidis, George, Vamvoukakis, Konstantinos, Zekentes, Konstantinos
Publikováno v:
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p407-410, 4p
Autor:
Zekentes, Konstantinos, Vassilevski, Konstantin, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Peyre, Herve, Makris, Nikolaos, Bucher, Matthias, Schmid, Patrick, Stefanakis, Dionyssios, Tassis, Dimitrios
Publikováno v:
Materials Science Forum; May 2016, Vol. 858 Issue: 1 p913-916, 4p
Autor:
Vamvoukakis Konstantinos
Περίληψη: Το καρβίδιο του πυριτίου είναι ένα υποσχόμενο ευρέως χάσματος (wide band-gap) ημιαγωγικό υλικό με πολύ καλές και ελπιδοφόρες ιδιότητ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4037::d047c0601f1e2f52ccf0ef7457114b0e
http://purl.tuc.gr/dl/dias/CE8D2057-FA4D-45CC-97BA-0B6EAEDCD01F
http://purl.tuc.gr/dl/dias/CE8D2057-FA4D-45CC-97BA-0B6EAEDCD01F
Autor:
Zekentes, Konstantinos, Vassilevski Konstantin V., Stavrinidis Antonis, Konstantinidis Georgios, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyré Hervé, Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis, Dimitrios
Summarization: Purely vertical 4H-SiC JFETs have been modeled by using three different approaches: the analytical model, the finite element model and the compact model. The results of the modelling have been compared with experimental results obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4037::6e5d5055871c45079c733de32ecdbbf6
http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242
http://purl.tuc.gr/dl/dias/4A45A9E9-F32E-4605-85BB-3A15A5888242
Autor:
Σταματελοπούλου-Σέυμουρ, Αικατερίνη, Vamvoukakis, Konstantinos, Αργιαλάς, Δημήτριος, Κίλιας, Στέφανος, Ρόκος, Δημήτριος, Φιλιππίδης, Ανέστης, Κουκουβέλας, Ιωάννης, Σταματόπουλος, Λεωνίδας
Στη διδακτορική αυτή διατριβή διερευνάται κατά πόσον η τηλεσκόπηση μπορεί να χρησιμεύει ως αρωγός για την κοιτασματολογική έρευνα και
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1047::3d764180403b597e3b4ddb828eb16f8f
http://nemertes.lis.upatras.gr/jspui/handle/10889/1756
http://nemertes.lis.upatras.gr/jspui/handle/10889/1756