Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vamsi Devarapalli"'
Autor:
Jennifer Sokol, John Zabasajja, Adam Ticknor, Vamsi Devarapalli, Sana Rafie, Matt Fritz, Vince Laraia, Wei-Tsu Tseng, Connie Truong, Christopher Majors
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P5001-P5007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::886dd895d4ee20525db0d4b074c54397
https://doi.org/10.1149/2.0011511jss
https://doi.org/10.1149/2.0011511jss
Autor:
Benjamin Backes, Vamsi Devarapalli, Patrick W. DeHaven, Wei-Tsu Tseng, Mahmoud Khojasteh, Elliott Rill, Yiping Yao, Adam Ticknor, Mark Chace, David Steber, Connie Truong, Laertis Economikos, Christopher Majors
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:N3023-N3031
Polyurethane (PU) pad debris is identified as one of the major polish residue defects in Cu CMP processes when a barrier pad is conditioned. AES analysis of the debris confirms the organic nature of such defects while FT-IR analysis reveals the chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::870d95c01c331726db20416abf29598d
https://doi.org/10.1149/2.006401jss
https://doi.org/10.1149/2.006401jss
Autor:
Christine Bunke, Mahmoud Khojasteh, James J. Steffes, Colin Goyette, Naftali E. Lustig, Stephan Grunow, Steven E. Molis, M. Zaitz, Leo Tai, Wei-Tsu Tseng, David Steber, Michael Kennett, Laertis Economikos, Adam Ticknor, Praneetha Poloju, Elliott Rill, Michael P. Chudzik, Vamsi Devarapalli, Connie Truong
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:493-499
A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546b1e994315b4775c6aac5f28af911e
https://doi.org/10.1109/tsm.2013.2273124
https://doi.org/10.1109/tsm.2013.2273124
Autor:
Vamsi Devarapalli, Jennifer Sokol, Wei-Tsu Tseng, Elliott Rill, Vince Laraia, Sana Rafie, Adam Ticknor, John Zabasajja, Matt Fritz, Charles Gould
Publikováno v:
Proceedings of International Conference on Planarization/CMP Technology 2014.
Metal-free micro-replicated conditioning disks are applied to the development of Cu and Cu barrier CMP processes for 22nm technology nodes. Compared with traditional pad conditioners with diamond grits embedded in metal matrix, the micro-replicated c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b8e5f84f177834d22f99d138cb8839
https://doi.org/10.1109/icpt.2014.7017269
https://doi.org/10.1109/icpt.2014.7017269
Autor:
S. Mittal, Colin Goyette, Christine Bunke, Vamsi Devarapalli, Michael Kennett, Leo Tai, Mahmoud Khojasteh, Steven E. Molis, George F. Ouimet, Elliott Rill, James J. Steffes, Praneetha Poloju, Laertis Economikos, Adam Ticknor, David Steber, Michael P. Chudzik, Wei-Tsu Tseng, Stephan Grunow, Connie Truong, M. Zaitz
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
A “hybrid” post-Cu CMP cleaning process that combines acidic and basic cleans in sequence is developed and implemented. The new process demonstrates the advantages of both acidic and basic cleans and achieves a more than 60% reduction in CMP defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e513808e8d012bbc5b66993b075352
https://doi.org/10.1109/asmc.2013.6552758
https://doi.org/10.1109/asmc.2013.6552758
Autor:
Christine Bunke, John H. Zhang, J.P. Zheng, Jennifer V. Muncy, Wei-Tsu Tseng, Qiang Fang, Leo Tai, Vamsi Devarapalli, Laertis Economikos, Donald F. Canaperi, James MacDougal, Matthew Angyal, Xiaomeng Chen, Adam Ticknor
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
Optimization of post Cu CMP cleaning performance can be accomplished through dilution ratio tuning and pad rinse of clean chemicals. Excessive chemical etching as well as megasonic power can induce high Cu roughness. Generation of hollow metal and Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7592317dd83a0d21fb1d8f11efae6281
https://doi.org/10.1109/asmc.2012.6212868
https://doi.org/10.1109/asmc.2012.6212868