Zobrazeno 1 - 10
of 571
pro vyhledávání: '"Valušis G"'
Autor:
Wang, X. W., Seniutinas, G., Balcytis, A., Kasalynas, I., Jakstas, V., Janonis, V., Venckevicius, R., Buividas, R., Appadoo, D., Valusis, G., Juodkazis, S.
Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripp
Externí odkaz:
http://arxiv.org/abs/1605.04493
Akademický článek
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Autor:
Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., Karpierz, K., Sakowicz, M., Valusis, G., Seliuta, D., Kasalynas, I., Fatimy, A. El, Meziani, Y., Otsuji, T.
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be use
Externí odkaz:
http://arxiv.org/abs/0907.2523
Autor:
Kundrotas, J., Cerskus, A., Valusis, G., Lachab, M., Khanna, S. P., Harrison, P., Linfield, E. H.
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a partic
Externí odkaz:
http://arxiv.org/abs/0711.0517
Autor:
Seliuta, D., Juozapavicius, A., Gruzinskis, V., Balakauskas, S., Asmontas, S., Valusis, G., Chow, W. -H., Steenson, P., Harrison, P., Lisauskas, A., Roskos, H. G., Koehler, K.
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such
Externí odkaz:
http://arxiv.org/abs/0711.0474
Autor:
Seliuta, D., Kavaliauskas, J., Cechavicius, B., Balakauskas, S., Valusis, G., Sherliker, B., Halsall, M. P., Harrison, P., Lachab, M., Khanna, S. P., Linfield, E. H.
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryll
Externí odkaz:
http://arxiv.org/abs/0711.0460
Autor:
Seliuta, D., Cechavicius, B., Kavaliauskas, J., Krivaite, G., Grigelionis, I., Balakauskas, S., Valusis, G., Sherliker, B., Halsall, M. P., Lachab, M., Khanna, S. P., Harrison, P., Linfield, E. H.
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh osci
Externí odkaz:
http://arxiv.org/abs/0711.0438
Autor:
Jarrahi, Mona, Preu, Sascha, Turchinovich, Dmitry, Ivaškevičiūtė-Povilauskienė, R., Čižas, V., Nacius, E., Grigelionis, I., Redeckas, K., Stanaitis, K., Orlov, S., Valušis, G., Minkevičius, L.
Publikováno v:
Proceedings of SPIE; June 2024, Vol. 12994 Issue: 1 p129940G-129940G-6, 1169467p
Autor:
Ivaškevičiūtė-Povilauskienė, R., Paddubskaya, A., Seliuta, D., Jokubauskis, D., Minkevičius, L., Urbanowicz, A., Matulaitienė, I., Mikoliūnaitė, L., Kuzhir, P., Valušis, G.
Publikováno v:
Journal of Applied Physics; 1/21/2022, Vol. 131 Issue 3, p1-9, 9p
Akademický článek
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