Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Valter Soncini"'
Autor:
Simona Spadoni, Valter Soncini, Francesco Fumagalli, Maria Luisa Polignano, S. Grasso, Enrica Ravizza
Publikováno v:
Surface and Interface Analysis. 48:428-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f6e86fa782f2dc5f20f3dc064e9f665
https://doi.org/10.1002/sia.5957
https://doi.org/10.1002/sia.5957
Publikováno v:
physica status solidi c. 9:2005-2008
In this work defects generated by argon implantation were studied both by Transmission Electron Microscopy (TEM) inspections and by measurements of the defect electrical activity at the oxide-silicon interface and in the bulk. TEM analyses showed def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a868db39512ec614c05f63bcc7f5777
https://doi.org/10.1002/pssc.201200074
https://doi.org/10.1002/pssc.201200074
Publikováno v:
ECS Transactions. 10:85-94
Some examples of contamination by mass interference are studied in this work, specifically the molybdenum contamination in indium and boron implantations. This contamination is detected by Elymat and DLTS analyses, whereas it is missed by SPV, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b983b46a7e020dc274f4a630cf8e36b8
https://doi.org/10.1149/1.2773979
https://doi.org/10.1149/1.2773979
Publikováno v:
AIP Conference Proceedings.
For MOS devices belonging to 65 nm technology node and beyond, ultra‐shallow LDD junctions are needed in order to match requirements in terms of sheet resistance and doping profile. PLAsma Doping has been proposed and developed as an effective and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41261b3d458f655e7877fcca8b83d1b
https://doi.org/10.1063/1.2401500
https://doi.org/10.1063/1.2401500
Autor:
I. Mica, G. Pavia, Valter Soncini, Maria Luisa Polignano, Aldo Armigliato, G.P. Carnevale, M. Brambilla, Roberto Balboni, F. Cazzaniga
Publikováno v:
Diffusion and defect data, solid state data. Part B, Solid state phenomena 95-96 (2004): 439–446. doi:10.4028/www.scientific.net/SSP.95-96.439
info:cnr-pdr/source/autori:Mica, I; Polignano, ML; Carnevale, GP; Armigliato, A; Balboni, R; Brambilla, M; Cazzaniga, F; Pavia, G; Soncini, V/titolo:Dislocation generation in device fabrication process/doi:10.4028%2Fwww.scientific.net%2FSSP.95-96.439/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2004/pagina_da:439/pagina_a:446/intervallo_pagine:439–446/volume:95-96
info:cnr-pdr/source/autori:Mica, I; Polignano, ML; Carnevale, GP; Armigliato, A; Balboni, R; Brambilla, M; Cazzaniga, F; Pavia, G; Soncini, V/titolo:Dislocation generation in device fabrication process/doi:10.4028%2Fwww.scientific.net%2FSSP.95-96.439/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2004/pagina_da:439/pagina_a:446/intervallo_pagine:439–446/volume:95-96
In this paper we discuss the physical mechanism and the critical factors for the dislocation generation in device processing. The mechanisms of the stress development are identified. Elastic stress is estimated from the convergent beam electron diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ccca1d1a78d6c7842eb8529a49f5005
