Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking

Autor: Eid, E., Lacrevaz, T., Bermond, C., Capraro, S., Roullard, J., Fléchet, B., Cadix, L., Farcy, A., Ancey, P., Calmon, F., Valorge, O., Leduc, P.

Publikováno v: In Microelectronic Engineering 2011 88(5):729-733

'Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking'

Autor: Eid, E., Lacrevaz, T., Bermond, C., de Rivaz, S., Capraro, S., Roullard, J., Cadix, L., Fléchet, B., Farcy, A., Ancey, P., Calmon, F., Valorge, O., Leduc, P.

Publikováno v: Materials for Advanced Metallization
Materials for Advanced Metallization, Mar 2010, Mechelen, Belgium
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2011, 88 (5), pp.729-733
Microelectronic Engineering, 2011, 88 (5), pp.729-733

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d9fe0aca22b4267c3a09fc88b5e3c631
https://hal.archives-ouvertes.fr/hal-00604323

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Power supply analysis of a large area integrated circuit.

Autor: Valorge, O., Andre, W., Savaria, Y., Blaquiere, Y.

Publikováno v: 2011 IEEE 9th International New Circuits & Systems Conference (NEWCAS); 2011, p398-401, 4p

Frequency and time domain characterization of substrate coupling effects in 3D integration stack.

Autor: Eid, E., Lacrevaz, T., Bermond, C., Capraro, S., Roullard, J., Flechet, B., Cadix, L., Farcy, A., Ancey, P., Calmon, F., Valorge, O., Leduc, P.

Publikováno v: 2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT); 2010, p1-6, 6p