Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Valli Arunachalam"'
Autor:
D. J. Resnick, I. Johnston, William J. Dauksher, S. Hall, L. Lea, B.N. Ramamurthi, S. B. Clemens, Janet Hopkins, K. H. Smith, Shahid Rauf, Peter L. G. Ventzek, Jyoti Kiron Bhardwaj, Huma Ashraf, Pawitter J. S. Mangat, Valli Arunachalam
Publikováno v:
Microelectronic Engineering. :607-612
One avenue for increasing the available pattern area on SCALPEL masks is to gravitate towards a dry etch process for membrane fabrication. As mature as Bosch etch processes are for MEMS applications and the like, there is still significant process de
Publikováno v:
Journal of Applied Physics. 89:2525-2534
A two-dimensional model has been used to understand the physics and process engineering issues associated with a conceptual 300 mm Cu internal-coil ionized physical vapor deposition reactor. It has been found that inductive coupling from the coil is
Publikováno v:
International Symposium for Testing and Failure Analysis.
Random single bit failures were encountered in cache areas of Motorola’s 0.13 µm CMOS products under development. Extensive in-line probe data and end-of-line probe data in conjunction with failure analysis indicated the presence of particles at t