A fully CAD consistent model of MESFETs and HEMTs

Autor: Valkov, Stéphane, Pouvil, Pierre, Temcamani, Farid, Leblanc, Rémy

Publikováno v: Valkov, Stéphane ; Pouvil, Pierre ; Temcamani, Farid ; Leblanc, Rémy (1998) A fully CAD consistent model of MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

An empirical large-signal model of MESFETs and HEMTs has been developed which ensures the full charge conservation, numerical stability and small-signal consistency during computer-aided simulations. For a maximum of accuracy, the charges are directl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54cfb7b46edf9a3bc5c22e0d359488ea
http://amsacta.unibo.it/1609/