Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Valiallah Zomorrodian"'
Publikováno v:
2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON).
In this article, a method for measurement and extraction of temperature-dependent X-Parameter (polyharmonic distortion, or PHD) models from high power RF and microwave power amplifiers for use in circuit and system level simulation is discussed in so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603f1f7cb64fdb5885acd588c5a6d82e
https://doi.org/10.1109/wamicon.2018.8363895
https://doi.org/10.1109/wamicon.2018.8363895
Publikováno v:
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd95f575a0020c8a226babb70bf9b46b
https://doi.org/10.1109/csics.2017.8240452
https://doi.org/10.1109/csics.2017.8240452
Publikováno v:
2017 IEEE 18th Wireless and Microwave Technology Conference (WAMICON).
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a489f8069e1a111af3fe4cf14083fa
https://doi.org/10.1109/wamicon.2017.7930237
https://doi.org/10.1109/wamicon.2017.7930237
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
FET cells used in high power amplifier designs often require large gate-to-gate spacing (pitch) in order to manage the heating due to the large power dissipation inside the cell and keep the channel temperature below the critical level. However, as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8f942d5b1ce09a379b3e997e281be3
https://doi.org/10.1109/mwsym.2016.7540163
https://doi.org/10.1109/mwsym.2016.7540163
Publikováno v:
physica status solidi c. 7:2450-2454
A scalable non-linear large signal model based on the ADS EE_HEMT model was developed for AlGaN/GaN HEMTs for use in linear and non-linear circuit design. Excellent agreement between simulations and measurements was obtained for the DC, small signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e08fefaabbd2c58807716d332ee97be
https://doi.org/10.1002/pssc.200983877
https://doi.org/10.1002/pssc.200983877
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A CW 100W MMIC limiter covering 2-5GHz band is presented using TriQuint's 2MI GaAs VPIN process. The new architecture uses a binary power splitter topology to distribute the input power equally to all the input anti-parallel diodes, resulting in high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd676902a5aaabe453212eb6c255700a
https://doi.org/10.1109/csics.2013.6659191
https://doi.org/10.1109/csics.2013.6659191
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba844e378b08df8595349ad7c5f10936
https://doi.org/10.1109/csics.2012.6340065
https://doi.org/10.1109/csics.2012.6340065
Autor:
Robert A. York, Valiallah Zomorrodian
Publikováno v:
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A MMIC frequency doubler using the AlGaN/GaN HEMT technology is presented in this letter. At the design frequency of f0 = 4 GHz and VDS = 35 V the circuit produced maximum output power of 30 dBm with a conversion gain of 5.5 dB, and maximum conversio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331fbc0973e563d5113502e971406bb5
https://doi.org/10.1109/csics.2011.6062491
https://doi.org/10.1109/csics.2011.6062491
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 µm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf9584d472ecd4da4193e4e28e2ef69
https://doi.org/10.1109/mwsym.2010.5514695
https://doi.org/10.1109/mwsym.2010.5514695