Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Valery V. Preobrazhensky"'
Autor:
M. S. Aksenov, Igor P. Prosvirin, Mikhail A. Putyato, Oleg E. Tereshchenko, Alexandr V. Kalinkin, N. A. Valisheva, V. A. Golyashov, Valery V. Preobrazhensky, B. R. Semyagin
Publikováno v:
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
Composition and electrical characteristics of HfO 2 /Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO 2 ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO 2 on Si-passivated GaAs(001) sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63acc8946a1d1d7eb1a26bc32f4b2af5
https://doi.org/10.1109/edm.2011.6006887
https://doi.org/10.1109/edm.2011.6006887
Autor:
Oleg E. Tereshchenko, B. R. Semyagin, Valery V. Preobrazhensky, Mikhail A. Putyato, N. A. Valisheva, M. S. Aksenov
Publikováno v:
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings.
Parameters of Schottky barrier diodes (SBD), such as the ideality factor (n), series resistance (R s ) and the effective barrier height (ϕ Bn ), were obtained from I-V and C-V measurements of Al/Si/GaAs and Al/GaAs heterostructures at room temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbe2def37a2f0c7310d84492f4eb65fe
https://doi.org/10.1109/edm.2011.6006879
https://doi.org/10.1109/edm.2011.6006879