Zobrazeno 1 - 10
of 183
pro vyhledávání: '"Valery V. Afanas'ev"'
Autor:
Michel Houssa, Geoffrey Pourtois, Valery V. Afanas'ev, Andre Stesmans, Konstantina Iordanidou, Ruishen Meng
Publikováno v:
ECS Transactions. 92:35-41
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea189d71fd4f324ceb8f8ec92e6d876
https://doi.org/10.1149/09201.0035ecst
https://doi.org/10.1149/09201.0035ecst
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
Autor:
H. Hody, Andrea Fantini, S. H. Sharifi, Robin Degraeve, Thomas Witters, J. Van Houdt, D. Crotti, Ludovic Goux, Valery V. Afanas'ev, Gouri Sankar Kar, Daniele Garbin, T. Ravsher
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Next-generation memory technologies utilizing crosspoint-array architecture require a two-terminal selector element with strong non-linearity, to suppress leakage currents. A promising candidate for this role is metal-semiconductor-metal (MSM) device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::446e51f1f056f5600d0b19ad1e999fb7
https://doi.org/10.1109/imw51353.2021.9439629
https://doi.org/10.1109/imw51353.2021.9439629
Autor:
D. Claes, Anne Vandooren, Tibor Grasser, Hiroaki Arimura, Dominic Waldhoer, Laura Nyns, Al-Moatasem El-Sayed, Valery V. Afanas'ev, L.-A. Ragnarsson, Naoto Horiguchi, B. Kaczer, D. Linten, J. Franco, Z. Wu, M. Jech, J.-F. de Marneffe, Andre Stesmans, Y. Kimura
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
integration requires development of low thermal budget process modules. High-quality SiO 2 interfacial layer (IL), obtained up to now only by high-temperature (≥850°C) oxidation or exposure, is crucial for pMOS NBTI reliability. In unannealed IL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8538e787c9531230c8693cb91b564ca
https://doi.org/10.1109/iedm13553.2020.9372054
https://doi.org/10.1109/iedm13553.2020.9372054
Autor:
S-W Kim, Ben Schoenaers, Lan Peng, Valery V. Afanas'ev, Serena Iacovo, J. De Vos, Andre Stesmans, Eric Beyne, Andy Miller, G. Beyer
Publikováno v:
2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC).
We present fundamental exploration of inorganic dielectric wafer-to-wafer (W2W) bonding by electron spin resonance (ESR) to assess the function of dangling bond-type interface defects. As compared to a standard PECVD SiO2 which contains negligible da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a49e45ad2a13b09ba72c36ce78e573
https://doi.org/10.1109/eptc50525.2020.9315054
https://doi.org/10.1109/eptc50525.2020.9315054
The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several conducting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54b0c4002602b437e1753ab923c8deb
https://lirias.kuleuven.be/handle/123456789/661262
https://lirias.kuleuven.be/handle/123456789/661262
Exfoliated flakes from molybdenite crystals often still serve as benchmark substrates for two-dimensional MoS2 fundamental and device-oriented research. In this article, results are reported of a multi-frequency electron paramagnetic resonance (EPR)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b676a24fef386830d5b9ee871d831aba
https://lirias.kuleuven.be/handle/123456789/665101
https://lirias.kuleuven.be/handle/123456789/665101
Autor:
Michel Houssa, Ruishen Meng, Valery V. Afanas'ev, Konstantina Iordanidou, Geoffrey Pourtois, Andre Stesmans
Hole-doping of GaX, InX (X = S or Se) and SnO monolayers is predicted to induce a stable ferromagnetic order in these two-dimensional materials, making them potentially interesting for nanoscaled spintronic devices. Ferromagnetism in these materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf7a4d945ac814ba64b60e4d4a2b25f8
https://lirias.kuleuven.be/handle/123456789/661574
https://lirias.kuleuven.be/handle/123456789/661574
Publikováno v:
Applied Sciences, Vol 10, Iss 2731, p 2731 (2020)
The high contact resistance at metal/two-dimensional (2D) semiconductor junctions is a major issue for the integration of 2D materials in nanoelectronic devices. We review here recent theoretical results on the contact resistance at lateral heterojun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26e29b9b5a94d5944d47f8c1b8778e55
https://www.mdpi.com/2076-3417/10/8/2731
https://www.mdpi.com/2076-3417/10/8/2731
Autor:
Oreste Madia, Andriy Hikavyy, J. Franco, Andre Stesmans, Valery V. Afanas'ev, B. Kaczer, Jacek Kepa
© 2019, Springer Science+Business Media, LLC, part of Springer Nature. Dangling bond defects (DBs) in silicon-passivated (1- or 3-nm thick Si cap) strained-(100)Si 1−x Ge x (x = 0.25–0.55) layers at interfaces with 1.8-nm thick HfO 2 gate dielec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4552f17cb56646db0e8fc40a977234f6
https://lirias.kuleuven.be/handle/123456789/635402
https://lirias.kuleuven.be/handle/123456789/635402
The contact resistance at metal/two-dimensional (2D) semiconductor heterojunctions is currently a major issue for the integration of 2D materials in new generations of nanoelectronic devices. In this chapter, the contact resistance at graphene/MoS2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fc381637f4592be7227dd9f7af89828
https://doi.org/10.1016/b978-0-12-821495-4.00008-7
https://doi.org/10.1016/b978-0-12-821495-4.00008-7