Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Valeriya Titova"'
Autor:
Valeriya Titova, Martin Lapke
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 575-582 (2024)
This study presents a novel, integrated approach to investigating and characterizing the impact of humidity on Insulated-Gate Bipolar Transistors (IGBTs) within large-scale inverter systems. Combining meticulously designed experimental setups and adv
Externí odkaz:
https://doaj.org/article/7341588a7cc44350881d72d93d099f74
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Carrier-selective and passivating SiO $$_{\rm x}$$ x /TiO $$_{\rm y}$$ y heterocontacts are an attractive alternative to conventional contacts due to their high efficiency potentials combined with relatively simple processing schemes. It is
Externí odkaz:
https://doaj.org/article/68acd77db9ef4d568d7c52c97d3535a3
Autor:
Valeriya Titova, Jan Schmidt
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125023-125023-7 (2018)
We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2–3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies a layer stack to the cel
Externí odkaz:
https://doaj.org/article/eb9845e6947f4277a33a6beb449d994b
Autor:
Taowen Wang, Florian Ehre, Thomas Paul Weiss, Boris Veith-Wolf, Valeriya Titova, Nathalie Valle, Michele Melchiorre, Jan Schmidt, Susanne Siebentritt
Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfb989df7bb32f158ffeb8e5d2314072
Autor:
Taowen Wang, Florian Ehre, Thomas Paul Weiss, Boris Veith‐Wolf, Valeriya Titova, Nathalie Valle, Michele Melchiorre, Omar Ramírez, Jan Schmidt, Susanne Siebentritt
Publikováno v:
Advanced Energy Materials 12 (2022), Nr. 44
Advanced Energy Materials
Advanced Energy Materials
To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode factor determined by photoluminescence is the diode factor from the neutral zone of the solar cell and thus a lower bound for the diode factor. Due to meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d75eb7fd8bba10e81861aceb03dc2822
https://www.repo.uni-hannover.de/handle/123456789/14101
https://www.repo.uni-hannover.de/handle/123456789/14101
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Contacts to crystalline silicon (c-Si) based on ultrathin layers of silicon oxide (SiO y ) and titanium oxide (TiO x ) have recently been shown to be highly selective to electrons if aluminum (Al) is used as top metal. Such SiO y /TiO x /Al electron-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da65ac8b9fb59d13dbb5431a25d16ea4
https://doi.org/10.1109/pvsc40753.2019.8980692
https://doi.org/10.1109/pvsc40753.2019.8980692
Publikováno v:
AIP Conference Proceedings.
Atomic-layer-deposited titanium oxide (TiOx) is examined for the application as electron-selective full-area contact to n−type silicon solar cells. Although the surface passivation quality of TiOx-...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474fd99509e6cfc786384c6f362e9b99
https://doi.org/10.1063/1.5049285
https://doi.org/10.1063/1.5049285
Publikováno v:
Energy Procedia 124 (2017)
We characterize the surface passivation properties of ultrathin titanium oxide (TiO x ) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1782298d548691411915d0237f91b2f9
http://www.repo.uni-hannover.de/handle/123456789/2294
http://www.repo.uni-hannover.de/handle/123456789/2294
Publikováno v:
Applied Physics Letters. 103:183901
We characterize the electronic properties of crystalline silicon (c-Si)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) junctions by means of contactless carrier lifetime measurements. The measurements demonstrate that this type o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43e40b623c4da71b654d40d1eaa7a77
https://doi.org/10.1063/1.4827303
https://doi.org/10.1063/1.4827303