Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Valeriya Kilchytska"'
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Autor:
Valeriya Kilchytska, Sergej Makovejev, Babak Kazemi Esfeh, Lucas Nyssens, Arka Halder, Jean-Pierre Raskin, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t
Externí odkaz:
https://doaj.org/article/cdb66ae5dc3c41f7ad244224734162ac
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 646-654 (2020)
This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax), as well as par
Externí odkaz:
https://doaj.org/article/604d5dc80ab54f939d62a7e5ef122832
Autor:
Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 789-796 (2020)
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed t
Externí odkaz:
https://doaj.org/article/0272cd05220a4e07b332e6db4491c173
Autor:
Babak Kazemi Esfeh, Valeriya Kilchytska, N. Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 810-816 (2019)
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (fT) and maximum oscillation frequency (fmax), as well as element
Externí odkaz:
https://doaj.org/article/a3798bc68dbd4473a5fcf2c48760a450
Autor:
Sergej Makovejev, Babak Kazemi Esfeh, François Andrieu, Jean-Pierre Raskin, Denis Flandre, Valeriya Kilchytska
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 3, Pp 201-213 (2014)
The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakag
Externí odkaz:
https://doaj.org/article/0e029ad343fc4ddca161625914cebf96
Autor:
El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, Pierre Gérard, Pascal Simon, Denis Flandre
Publikováno v:
Sensors, Vol 13, Iss 12, Pp 17265-17280 (2013)
This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is de
Externí odkaz:
https://doaj.org/article/5ebb8a4f1003413aae988f13b4a80cc6
Publikováno v:
IEEE Electron Device Letters. 42:1085-1088
This work reports first original results on the impact of active in-situ electro-thermal recovery, on the electrical and low-frequency noise characteristics of N-type MOS transistor with thick high-k metal gate oxide, from 28 nm Fully Depleted Silico
Publikováno v:
IEEE Electron Device Letters, Vol. 42, no.5, p. 665-668 (2021)
IEEE Electron Device Letters
IEEE Electron Device Letters
This paper proposes an original approach to separately characterize self-heating and substrate effects in Fully-Depleted Silicon-on-Insulator (FD-SOI) devices. As both dynamic self-heating and drain to source coupling through the back-gate and substr
Autor:
Sergej Makovejev, Denis Flandre, Arka Halder, Jean-Pierre Raskin, Valeriya Kilchytska, Lucas Nyssens, Babak Kazemi Esfeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 500-510 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 500-510 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 500-510 (2021)
This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of t