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pro vyhledávání: '"Valeriy A. Slipko"'
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:214-218
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or indu
Publikováno v:
Radioengineering. 2021 vol. 30, č. 1, s. 157-163. ISSN 1210-2512
Efficient simulation of stochastic memristors and their networks requires novel modeling approaches. Utilizing a master equation to find occupation probabilities of network states is a recent major departure from typical memristor modeling [Chaos, so
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
IEEE Transactions on Circuits and Systems Ii-Express Briefs. 68(6):2167-2171
Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here, we show that the actual choice of window function is of significant importance for the predictive modelling
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
Physica E-Low-Dimensional Systems & Nanostructures. 114:1-5
Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dy
The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c61eeac5b12b27cc00619f256e625b4
http://arxiv.org/abs/2003.11011
http://arxiv.org/abs/2003.11011
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
Handbook of Memristor Networks ISBN: 9783319763743
Handbook of Memristor Networks
Handbook of Memristor Networks
One-dimensional (1D) memristive networks are the simplest type of memristive networks one can imagine. Yet, despite their morphological simplicity, such networks represent an important class of memory networks characterized by the strongest interacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a34bb33639f8137b87c477a6d32b6ece
https://doi.org/10.1007/978-3-319-76375-0_33
https://doi.org/10.1007/978-3-319-76375-0_33
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
Journal of Physics D: Applied Physics. 52:505304
This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are aff
Autor:
Valeriy A. Slipko, Yuriy V. Pershin
Publikováno v:
Physical Review E. 95
Traditional studies of memristive devices have mainly focused on their applications in nonvolatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies-the transfer of i
Kinks and antikinks of the classical ${\ensuremath{\varphi}}^{4}$ field model are topological solutions connecting its two distinct ground states. Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c53b73e2011a3c03db4b854c1eed767b