Contact resistance optimization for development of thermoelectric modules based on bismuth telluride nanowires

Autor: Sébastien Pairis, Daniel Bourgault, E. André, Meriam Ben Khedim, Laurent Cagnon, Valerie Serradeil

Publikováno v: AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (5), pp.055109. ⟨10.1063/5.0043940⟩
AIP Advances, Vol 11, Iss 5, Pp 055109-055109-7 (2021)

This paper presents a study of the contact resistance between a metal M (M = Ni, Pt, and Au) and an array of n-type Bi2Te3−xSex thermoelectric nanowires deposited through the electrodeposition process in the alumina membrane. Contact resistances be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c13fc09f767f8f70462d0ed515cff811
https://doi.org/10.1063/5.0043940

Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology

Autor: R. Llido, Vincent Pouget, Dean Lewis, Jean-Max Dutertre, Alexandre Sarafianos, V. Goubier, Mathieu Lisart, Assia Tria, Valerie Serradeil, Olivier Gagliano

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2012, pp.2035-2038. ⟨10.1016/j.microrel.2012.06.047⟩
Microelectronics Reliability, 2012, pp.2035-2038. ⟨10.1016/j.microrel.2012.06.047⟩

International audience; This paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3caffb7f2bf689467ae4b3e8874afcc
https://doi.org/10.1016/j.microrel.2012.06.047

Robustness improvement of an SRAM cell against laser-induced fault injection

Autor: Assia Tria, Cyril Roscian, Alexandre Sarafianos, Mathieu Lisart, Valerie Serradeil, Jean-Max Dutertre, Olivier Gagliano

Publikováno v: Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on, Oct 2013, New York, United States. ⟨10.1109/DFT.2013.6653598⟩
DFTS

International audience; This paper presents the design of an SRAM cell with a robustness improvement against laser-induced fault injection. We report the fault sensitivity mapping of a first SRAM design. A careful analysis of its results combined wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5d9d35961496953768a680ca902b182
https://hal-emse.ccsd.cnrs.fr/emse-01109141

Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

Autor: Valerie Serradeil, Mathieu Lisart, Olivier Gagliano, Alexandre Sarafianos, Assia Tria, J-M. Dutertre

Publikováno v: International Reliability Physics Symposium (IRPS)
International Reliability Physics Symposium (IRPS), Apr 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6532028⟩

International audience; This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc66e1b6b5577c72001b61463c3d7064
https://doi.org/10.1109/irps.2013.6532028

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

Autor: Gérald Haller, Assia Tria, Valerie Serradeil, R. Llido, Dean Lewis, Vincent Pouget, Mathieu Lisart, Olivier Gagliano, Alexandre Sarafianos, Jean-Max Dutertre, V. Goubier

Publikováno v: 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::112160893520ec1cfe0a711fe2afe5c4
https://doi.org/10.1109/ipfa.2012.6306298