Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Valeria Vadalà"'
Autor:
Mohammad Alibakhshikenari, Bal S. Virdee, Dion Mariyanayagam, Valeria Vadalà, Mohammad Naser-Moghadasi, Chan H. See, Iyad Dayoub, Sonia Aïssa, Patrizia Livreri, Shah Nawaz Burokur, Anna Pietrenko-Dabrowska, Francisco Falcone, Slawomir Koziel, Ernesto Limiti
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract An innovative off-chip antenna (OCA) is presented that exhibits high gain and efficiency performance at the terahertz (THz) band and has a wide operational bandwidth. The proposed OCA is implemented on stacked silicon layers and consists of
Externí odkaz:
https://doaj.org/article/ba31fd2748174a8491078452e36198e7
Autor:
Giovanni Gugliandolo, Giovanni Crupi, Valeria Vadalà, Antonio Raffo, Nicola Donato, Giorgio Vannini
Publikováno v:
IEEE Microwave and Wireless Technology Letters. :1-4
Publikováno v:
Electronics; Volume 12; Issue 13; Pages: 2939
In this paper, we experimentally investigate the effects of degradation observed on 0.15-µm GaN HEMT devices when operating under realistic power amplifier conditions. The latter will be applied to the devices under test (DUT) by exploiting a low-fr
Autor:
Francesco Scappaviva, Gianni Bosi, Andrea Biondi, Sara D’Angelo, Luca Cariani, Valeria Vadalà, Antonio Raffo, Davide Resca, Elisa Cipriani, Giorgio Vannini
Publikováno v:
Electronics; Volume 11; Issue 19; Pages: 2998
In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It is designed exploiting a GaN on SiC technology featured by 150 nm gate length provided by UMS foundry. This MMIC integrates high power and low noise amp
Autor:
Valeria Vadalà, Anwar Jarndal, Antonio Raffo, Giovanni Crupi, Giorgio Vannini, Mohammad Abdul Alim
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 35
This work focuses on the equivalent-circuit modeling of microwave field-effect transistors. Although the purely direct approach allows obtaining a good prediction accuracy in a straightforward way without the need of any optimization, optimization al
In this article, a study of performing machine learning (ML) based modeling for semiconductor devices has been developed using experimental microwave data. Characterization of gallium arsenide (GaAs) pseudomorphic high electron mobility transistors (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0b9dc0cba797793f60cc803c90e4c1e
http://hdl.handle.net/10281/393648
http://hdl.handle.net/10281/393648
This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F-1) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8eea1eaccc7d099dbed19c42bf836be4
https://hdl.handle.net/10281/397081
https://hdl.handle.net/10281/397081
Publikováno v:
IEEE Access, Vol 12, Pp 72721-72729 (2024)
This article describes an innovative methodology to calibrate EM simulators, oriented to monolithic microwave integrated circuit design, in order to achieve the highest level of accuracy achievable in electromagnetic simulation. In particular, a two-
Externí odkaz:
https://doaj.org/article/7387aa710ea848328616e4b848920203
Autor:
Iltcho Angelov, Gustavo Avolio, Kurt Barbé, Alina Caddemi, Walter Ciccognani, Sergio Colangeli, Giovanni Crupi, Telmo R. Cunha, Gilles Dambrine, Lieve Lauwers, Ernesto Limiti, Bart Nauwelaers, José C. Pedro, Antonio Raffo, James C. Rautio, Davide Resca, Dominique M.M.-P. Schreurs, Valeria Vadalà, Wendy Van Moer, Giorgio Vannini, Manuel Yarlequé
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e519acb74e9c24f66a40bd40406d6784
https://doi.org/10.1016/b978-0-12-401700-9.01002-8
https://doi.org/10.1016/b978-0-12-401700-9.01002-8
Publikováno v:
Scopus-Elsevier
The manuscript details a high power amplifier (PA) design technique, based on time-domain large-signal measurements. In particular, large-signal input impedance matching has been carried out to ensure optimal power transfer under actual device operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::452aaa782e0bfa1f034bb0d6e78358fc
http://hdl.handle.net/11392/1761508
http://hdl.handle.net/11392/1761508