Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Valeri F. Tsvetkov"'
Autor:
Adrian Powell, Calvin H. Carter, Joseph John Sumakeris, Cengiz Balkas, Cem Basceri, H. McD. Hobgood, R.T. Leonard, D.P. Malta, I.I. Khlebnikov, Yuri I. Khlebnikov, Michael James Paisley, Elif Berkman, Albert A. Burk, M.F. Brady, Vijay Balakrishna, Eugene Deyneka, Valeri F. Tsvetkov, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :3-6
Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3720050cb306432f06eaa21c2e31416b
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
Autor:
Q. Jon Zhang, Brett Hull, Michael James Paisley, Valeri F. Tsvetkov, Angel Rivera, Joseph John Sumakeris, Adrian Powell, Michael J. O'Loughlin, Allen R. Hefner, Jim Richmond
Publikováno v:
Materials Science Forum. :931-934
DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f0c52babe1dd076f0ecc4dc2c95ba4
https://doi.org/10.4028/www.scientific.net/msf.600-603.931
https://doi.org/10.4028/www.scientific.net/msf.600-603.931
Autor:
Adrian Powell, Robert Tyler Leonard, Jason Ronald Jenny, Calvin H. Carter, Michael James Paisley, M.F. Brady, R. Zilli, Yuri I. Khlebnikov, Vijay Balakrishna, Eugene Deyneka, I.I. Khlebnikov, H. McD. Hobgood, Valeri F. Tsvetkov, D.P. Malta, Cem Basceri
Publikováno v:
Materials Science Forum. :7-10
Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dbd8f36b6ea0c79e01838ced136b81b
https://doi.org/10.4028/www.scientific.net/msf.600-603.7
https://doi.org/10.4028/www.scientific.net/msf.600-603.7
Autor:
Calvin H. Carter, H. McD. Hobgood, Stephan G. Müller, Adrian Powell, Valeri F. Tsvetkov, Jason Ronald Jenny, Robert Lenoard
Publikováno v:
International Journal of High Speed Electronics and Systems. 16:751-777
In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09ff30a7ee074aea49fa7bc45774cb5
https://doi.org/10.1142/s0129156406004016
https://doi.org/10.1142/s0129156406004016
Autor:
R.T. Leonard, Calvin H. Carter, Valeri F. Tsvetkov, D.P. Malta, H. McD. Hobgood, Jason Ronald Jenny, M.F. Brady, M.R. Calus, R.C. Glass, Adrian Powell, Stephan G. Müller
Publikováno v:
Materials Science Forum. :3-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fbdad2433272161d46778a5ae242cf1
https://doi.org/10.4028/www.scientific.net/msf.457-460.3
https://doi.org/10.4028/www.scientific.net/msf.457-460.3
Autor:
Adrian Powell, Valeri F. Tsvetkov, D.P. Malta, M.R. Calus, H. McD. Hobgood, Stephan G. Müller, Jason Ronald Jenny, R.C. Glass, Calvin H. Carter
Publikováno v:
Materials Science Forum. :35-40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d35face5ed256581992a9e675b67da3
https://doi.org/10.4028/www.scientific.net/msf.457-460.35
https://doi.org/10.4028/www.scientific.net/msf.457-460.35
Autor:
R.C. Glass, Adrian Powell, H. McD. Hobgood, Valeri F. Tsvetkov, Albert A. Burk, Joseph John Sumakeris, Calvin H. Carter, R.T. Leonard, Stephan G. Müller, R. Trussell, M.F. Brady
Publikováno v:
Materials Science Forum. :41-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55683a3d4585d6c0e4e958f4626ed682
https://doi.org/10.4028/www.scientific.net/msf.457-460.41
https://doi.org/10.4028/www.scientific.net/msf.457-460.41
Autor:
M.F. Brady, D.P. Malta, William H Brixius, S.T. Allen, Adrian Powell, Valeri F. Tsvetkov, Jason Ronald Jenny, H. McD. Hobgood, R.T. Leonard, R.C. Glass, Calvin H. Carter, John W. Palmour, Stephan G. Müller
Publikováno v:
Materials Science Forum. :39-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989ef9b12b9b326b28436f28cdee84a6
https://doi.org/10.4028/www.scientific.net/msf.433-436.39
https://doi.org/10.4028/www.scientific.net/msf.433-436.39
Autor:
D.P. Malta, H. McD. Hobgood, M.F. Brady, Valeri F. Tsvetkov, S.T. Allen, Jason Ronald Jenny, R.C. Glass, D. Henshall, William H Brixius, John W. Palmour, Calvin H. Carter, R.T. Leonard, Stephan G. Müller, Adrian Powell, G. Fechko
Publikováno v:
Materials Science Forum. :23-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bae81193fc9535fb5975e5b88f6b0c6
https://doi.org/10.4028/www.scientific.net/msf.389-393.23
https://doi.org/10.4028/www.scientific.net/msf.389-393.23
Autor:
Valeri F. Tsvetkov, H.M. Hobgood, M.F. Brady, D. Henshall, C.H. Carter, St. G. Müller, R.C. Glass, J.R Jenny, D. Malta
Publikováno v:
Journal of Crystal Growth. 211:325-332
Silicon-carbide-based device technology as well as the volume production of nitride-based, high brightness blue and green LEDs fabricated on SiC substrates has made tremendous progress within the last several years. The commercial availability of lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac9ae87d28d13b0f0402a7020d3e1f15
https://doi.org/10.1016/s0022-0248(99)00835-0
https://doi.org/10.1016/s0022-0248(99)00835-0