Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Valentin O. Turin"'
Autor:
Valentin O. Turin, Roman S. Shkarlat, Vyacheslav N. Poyarkov, Oleg N. Kshensky, Zebrev I. Zebrev, Benjamín Iniguez, Michael S. Shur
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b6eaec90f99ccd0f0ba15a9f2a70e1
https://doi.org/10.1117/12.2624419
https://doi.org/10.1117/12.2624419
Autor:
Gennady I. Zebrev, Valentin O. Turin, Roman Sergeevich Shkarlat, Benjamin Iniguez, Michael Shur
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of “intrinsic” MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a95d32dba6ac507b01574f02b463fa7
https://doi.org/10.1109/edtm47692.2020.9117810
https://doi.org/10.1109/edtm47692.2020.9117810
Autor:
Roman Sergeevich Shkarlat, Michael Shur, V. Poyarkov, O. Kshensky, B. Iniguez, Valentin O. Turin, Gennady I. Zebrev
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on “extrinsic” drain bias and accounting for the parasitic and contact series r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e422b2347a7ce92f87725870ed3ac2
https://doi.org/10.1117/12.2521880
https://doi.org/10.1117/12.2521880
Autor:
Valentin O. Turin, R. G. Useinov, Vasily S. Anashin, Gennady I. Zebrev, Kirill A. Yesenkov, Maxim S. Gorbunov, Alexander S. Vatuev, Vladimir V. Emeliyanov
Publikováno v:
IEEE Transactions on Nuclear Science. 61:1531-1536
We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::609c354146fb636118df6c0446f1a2d7
https://doi.org/10.1109/tns.2014.2315852
https://doi.org/10.1109/tns.2014.2315852
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27:863-874
We suggest a simple and versatile approach for the correct account of differential conductance in the saturation regime that provides a monotonic decrease of the differential conductance from its maximum value to its minimum positive or even negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79710d0b1a53a76e3a4863087c62b09d
https://doi.org/10.1002/jnm.1969
https://doi.org/10.1002/jnm.1969
Autor:
Chang-Hyun Kim, Benjamin Iniguez, Valentin O. Turin, Gennady I. Zebrev, Michael Shur, B A Rakhmatov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 498:012038
The saturation current of an organic field-effect transistor was calculated numerically by bisection method taking into account the source and drain resistances. Dependences of the saturation current as a function of the gate voltage, centred on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb6f157cfd2b56590df730a508f7eb5
https://doi.org/10.1088/1757-899x/498/1/012038
https://doi.org/10.1088/1757-899x/498/1/012038
Autor:
Gennady I. Zebrev, A. A. Lebedev, I. A. Danilov, Maxim G. Drosdetsky, Valentin O. Turin, Artur M. Galimov
Publikováno v:
SPIE Proceedings.
It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::241cfcb1bf7fa39e52a18c65d29f6474
https://doi.org/10.1117/12.2180758
https://doi.org/10.1117/12.2180758
Autor:
Valentin O. Turin
Publikováno v:
Solid-State Electronics. 49:1678-1682
An approximation formula for electron high-field mobility in GaN is proposed. One is tested in wide range of temperatures and doping concentrations and is able to replicate the specific electron drift velocity dependence on electric field in GaN more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152e5b6ae26eeb69c483576fc5b1a646
https://doi.org/10.1016/j.sse.2005.09.002
https://doi.org/10.1016/j.sse.2005.09.002
Autor:
Gennady I. Zebrev, Alexander S. Vatuev, Rustem G. Useinov, Vladimir V. Emeliyanov, Vasily S. Anashin, Maxim S. Gorbunov, Valentin O. Turin
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44167f75a6a6fb03e14f27817b4e9629
https://doi.org/10.1109/radecs.2013.6937359
https://doi.org/10.1109/radecs.2013.6937359
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 63:429-432
The motion of an electronic wave packet in the interelectrode space of a vacuum photodetector is investigated. It is shown that the dimensions of such a packet are of the order of 1 micron and are comparable to the optical wavelength. On interacting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9183757993f685a2e0adb55b3c23d6
https://doi.org/10.1134/1.567043
https://doi.org/10.1134/1.567043