Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Valentin Gherman"'
Autor:
Mona Ezzadeen, Atreya Majumdar, Olivier Valorge, Niccolo Castellani, Valentin Gherman, Guillaume Regis, Bastien Giraud, Jean-Philippe Noel, Valentina Meli, Marc Bocquet, Francois Andrieu, Damien Querlioz, Jean-Michel Portal
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-15 (2024)
Abstract Resistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing. However most popular accelerators rely on Ohm’s and Kirchhoff’s laws to achieve mul
Externí odkaz:
https://doaj.org/article/d5a9d55ce1b346a281c00ff8d78741b5
Publikováno v:
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing: : Theory and Applications, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
International audience; Selecting the ideal trade-off between reliability improvement and cost (i.e., area, timing and power overhead) associated with a fault tolerant architecture generally requires an extensive Design Space Exploration. In this pap
Publikováno v:
DATE 2020-2020 Design, Automation & Test in Europe Conference & Exhibition
DATE 2020-2020 Design, Automation & Test in Europe Conference & Exhibition, IEEE, Mar 2020, Grenoble, France. pp.298-301, ⟨10.23919/DATE48585.2020.9116531⟩
DATE
DATE 2020-2020 Design, Automation & Test in Europe Conference & Exhibition, IEEE, Mar 2020, Grenoble, France. pp.298-301, ⟨10.23919/DATE48585.2020.9116531⟩
DATE
ISBN: 9783981926347 - 9781728144689 (Print); International audience; Many memory types are asymmetric with respect to the error vulnerability of stored 0's and 1's. For instance, DRAM, STT-MRAM and NAND flash memories may suffer from asymmetric error
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ffea9631e4e288fcb3dd81166dedf8
https://hal-cea.archives-ouvertes.fr/cea-03469725/document
https://hal-cea.archives-ouvertes.fr/cea-03469725/document
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
International audience; A recent large-scale study revealed that the uncorrectable bit error rates in data center solid-sate drives (SSDs) may fall far below the JEDEC standard recommendations. Here, a new refresh policy is proposed to improve the to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51d0592b74f01c7206d4004a057bb7c5
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
Publikováno v:
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
DTIS
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
DTIS
International audience; Selecting the ideal trade-off between reliability and cost associated with a fault tolerant architecture generally involves an extensive design space exploration. In this paper, we address the problem of selective hardening of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82fbddea1c9c9bde6762f95aabc818e0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03130537
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03130537
Publikováno v:
DTIS: Design & Technology of Integrated Systems In Nanoscale Era
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
International audience; In this paper, we evaluate the temperature influence on the vulnerability to single event upsets (SEU) of 6-transistor static random access memory (6T-SRAM) cells and dual interlocked storage cells (DICE). The critical charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed4ac9fdf136eaf30f46f1bc18f1e6a6
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
Publikováno v:
ITC
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
International audience; Solid-state drives (SSDs) based on NAND flash memories provide an attractive storage solution as they are faster and less power hungry than traditional hard-disc drives (HDDs). Aggressive storage density improvements in flash
Autor:
Valentin Gherman, Francis Joffre, Costin Anghel, Marcelino Seif, Franck Badets, Emna Farjallah, Emna Chabchoub, Christophe Layer, Jean-Marc Armani, Luigi Dilillo
Publikováno v:
22nd IEEE European Test Symposium
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
International audience; Increasing the number of bits per cell and technology scaling are ways to reduce the cost per gigabyte of flash memories and solid-state drives (SSDs). Unfortunately, this trend has a negative impact on data retention capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4cb994baf0edb369b31dc7dae7c8dc0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
Autor:
Ivan Miro-Panades, Lirida Alves de Barros Naviner, Sebastien Sarrazin, Valentin Gherman, Samuel Evain
Publikováno v:
2014 IEEE 20th International
Testing Symposium (IOLTS)
Testing Symposium (IOLTS), Jul 2014, Catalunya, Spain. pp.160-163, ⟨10.1109/IOLTS.2014.6873689⟩
IOLTS
Testing Symposium (IOLTS)
Testing Symposium (IOLTS), Jul 2014, Catalunya, Spain. pp.160-163, ⟨10.1109/IOLTS.2014.6873689⟩
IOLTS
Conference of 20th IEEE International On-Line Testing Symposium, IOLTS 2014 ; Conference Date: 7 July 2014 Through 9 July 2014; Conference Code:107097; International audience; In-situ slack-time monitoring may be used to enable ambitious power manage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d82bcd06a09264202e229818284d4f4
https://cea.hal.science/cea-01839855
https://cea.hal.science/cea-01839855
Autor:
Lirida Alves de Barros Naviner, Suresh Pajaniradja, Sebastien Sarrazin, Valentin Gherman, Alexandre Valentian, Samuel Evain, Ivan Miro-Panades
Publikováno v:
2014 19th IEEE European Test Symposium (ETS)
2014 19th IEEE European Test Symposium (ETS), May 2014, Paderborn, Germany. ⟨10.1109/ETS.2014.6847801⟩
ETS
2014 19th IEEE European Test Symposium (ETS), May 2014, Paderborn, Germany. ⟨10.1109/ETS.2014.6847801⟩
ETS
Conference of 19th IEEE European Test Symposium, ETS 2014 ; Conference Date: 26 May 2014 Through 30 May 2014; Conference Code:106457; International audience; Shadow-scan solutions are proposed in order to facilitate the implementation of faster scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e6d405bbf06f04eab52327c5afcbc6a
https://hal-cea.archives-ouvertes.fr/cea-01838144
https://hal-cea.archives-ouvertes.fr/cea-01838144