Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Valentin Gherman"'
Autor:
Mona Ezzadeen, Atreya Majumdar, Olivier Valorge, Niccolo Castellani, Valentin Gherman, Guillaume Regis, Bastien Giraud, Jean-Philippe Noel, Valentina Meli, Marc Bocquet, Francois Andrieu, Damien Querlioz, Jean-Michel Portal
Publikováno v:
Communications Engineering, Vol 3, Iss 1, Pp 1-15 (2024)
Abstract Resistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing. However most popular accelerators rely on Ohm’s and Kirchhoff’s laws to achieve mul
Externí odkaz:
https://doaj.org/article/d5a9d55ce1b346a281c00ff8d78741b5
Publikováno v:
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing: : Theory and Applications, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2020, 36, pp.33-46. ⟨10.1007/s10836-020-05858-5⟩
International audience; Selecting the ideal trade-off between reliability improvement and cost (i.e., area, timing and power overhead) associated with a fault tolerant architecture generally requires an extensive Design Space Exploration. In this pap
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
International audience; A recent large-scale study revealed that the uncorrectable bit error rates in data center solid-sate drives (SSDs) may fall far below the JEDEC standard recommendations. Here, a new refresh policy is proposed to improve the to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51d0592b74f01c7206d4004a057bb7c5
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
Publikováno v:
DTIS: Design & Technology of Integrated Systems In Nanoscale Era
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
International audience; In this paper, we evaluate the temperature influence on the vulnerability to single event upsets (SEU) of 6-transistor static random access memory (6T-SRAM) cells and dual interlocked storage cells (DICE). The critical charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed4ac9fdf136eaf30f46f1bc18f1e6a6
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
Publikováno v:
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
DTIS
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, Apr 2018, Taormina, Italy. pp.1-6, ⟨10.1109/DTIS.2018.8368559⟩
DTIS
International audience; Selecting the ideal trade-off between reliability and cost associated with a fault tolerant architecture generally involves an extensive design space exploration. In this paper, we address the problem of selective hardening of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82fbddea1c9c9bde6762f95aabc818e0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03130537
https://hal-lirmm.ccsd.cnrs.fr/lirmm-03130537
Publikováno v:
ITC
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
International audience; Solid-state drives (SSDs) based on NAND flash memories provide an attractive storage solution as they are faster and less power hungry than traditional hard-disc drives (HDDs). Aggressive storage density improvements in flash
Autor:
Valentin Gherman, Francis Joffre, Costin Anghel, Marcelino Seif, Franck Badets, Emna Farjallah, Emna Chabchoub, Christophe Layer, Jean-Marc Armani, Luigi Dilillo
Publikováno v:
22nd IEEE European Test Symposium
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
International audience; Increasing the number of bits per cell and technology scaling are ways to reduce the cost per gigabyte of flash memories and solid-state drives (SSDs). Unfortunately, this trend has a negative impact on data retention capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4cb994baf0edb369b31dc7dae7c8dc0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
Autor:
Ivan Miro-Panades, Lirida Alves de Barros Naviner, Sebastien Sarrazin, Valentin Gherman, Samuel Evain
Publikováno v:
2014 IEEE 20th International
Testing Symposium (IOLTS)
Testing Symposium (IOLTS), Jul 2014, Catalunya, Spain. pp.160-163, ⟨10.1109/IOLTS.2014.6873689⟩
IOLTS
Testing Symposium (IOLTS)
Testing Symposium (IOLTS), Jul 2014, Catalunya, Spain. pp.160-163, ⟨10.1109/IOLTS.2014.6873689⟩
IOLTS
Conference of 20th IEEE International On-Line Testing Symposium, IOLTS 2014 ; Conference Date: 7 July 2014 Through 9 July 2014; Conference Code:107097; International audience; In-situ slack-time monitoring may be used to enable ambitious power manage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d82bcd06a09264202e229818284d4f4
https://cea.hal.science/cea-01839855
https://cea.hal.science/cea-01839855
Autor:
Lirida Alves de Barros Naviner, Suresh Pajaniradja, Sebastien Sarrazin, Valentin Gherman, Alexandre Valentian, Samuel Evain, Ivan Miro-Panades
Publikováno v:
2014 19th IEEE European Test Symposium (ETS)
2014 19th IEEE European Test Symposium (ETS), May 2014, Paderborn, Germany. ⟨10.1109/ETS.2014.6847801⟩
ETS
2014 19th IEEE European Test Symposium (ETS), May 2014, Paderborn, Germany. ⟨10.1109/ETS.2014.6847801⟩
ETS
Conference of 19th IEEE European Test Symposium, ETS 2014 ; Conference Date: 26 May 2014 Through 30 May 2014; Conference Code:106457; International audience; Shadow-scan solutions are proposed in order to facilitate the implementation of faster scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e6d405bbf06f04eab52327c5afcbc6a
https://hal-cea.archives-ouvertes.fr/cea-01838144
https://hal-cea.archives-ouvertes.fr/cea-01838144
Publikováno v:
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
Journal of Electronic Testing: : Theory and Applications, Springer Verlag, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
Journal of Electronic Testing, Springer Verlag, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
Journal of Electronic Testing: : Theory and Applications, Springer Verlag, 2014, 30, pp.183-192. ⟨10.1007/s10836-014-5440-1⟩
International audience; Two error correction schemes are proposed for word-oriented binary memories that can be affected by erasures, i.e. errors with known location but unknown value. The erasures considered here are due to the drifting of the elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7572a54bd88ff6a49399292e62a795b3
https://hal.archives-ouvertes.fr/hal-01820216
https://hal.archives-ouvertes.fr/hal-01820216