Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Valentin Garbe"'
Publikováno v:
ECS Transactions. 108:3-18
GaN based devices are one of the main candidates for current power electronics and RF applications [1,2]. For optimizing device performance, a detailed understanding of the defects contained in the material and the passivation capability of dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae773c4bd2aaf10b40cee05d1ec80b09
https://doi.org/10.1149/10802.0003ecst
https://doi.org/10.1149/10802.0003ecst
Autor:
Jakob Garbe, Jonas Rosendahl, Valentin Garbe, Sebastian Krug, Jan W. Kantelhardt, Stephan Eisenmann, Patrick Michl
Publikováno v:
Wiener klinisches Magazin. 24:216-222
Die Propofolsedierung wahrend endoskopischer Eingriffe ist ein etabliertes und weitgehend sicheres Verfahren. Insbesondere bei langen Untersuchungen, Notfallen und Komorbiditaten steigt das Risiko fur Sedierungszwischenfalle jedoch sprunghaft an. Ein
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7923014b2ae22e8c44a671bcf46feeb9
https://doi.org/10.1007/s00740-021-00424-x
https://doi.org/10.1007/s00740-021-00424-x
Autor:
Cameliu Himcinschi, Sven Grimm, Esteban-Mauricio Zuniga-Puelles, Andreas Leithe-Jasper, Valentin Garbe, Igor Veremchuk, Roman Gumeniuk, Paweł Wyżga
Publikováno v:
Journal of Materials Chemistry C. 9:4008-4019
A structural and thermoelectric study of the polycrystalline Se- and Te-substituted In2.67S4 thiospinels was performed. The obtained In2.67S4−xSex (0 ≤ x ≤ 0.5) and In2.67S4−yTey (0 ≤ y ≤ 0.15) samples were single phase and the solubility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b85ed643cff931980ddad05d2739f8fb
https://doi.org/10.1039/d1tc00291k
https://doi.org/10.1039/d1tc00291k
Autor:
Alexander Schmid, Barbara Abendroth, Johannes Heitmann, Sarah Seidel, Dirk C. Meyer, Valentin Garbe, Philipp Doering, Hartmut Stöcker
Publikováno v:
physica status solidi (b). 259:2100312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b8cd46b3193b481af80ef9e9e17e3e
https://doi.org/10.1002/pssb.202100312
https://doi.org/10.1002/pssb.202100312
Autor:
Barbara Abendroth, Valentin Garbe, D. Cohen-Elias, Dirk C. Meyer, Shlomo Mehari, Hartmut Stöcker, Arkadi Gavrilov, Dan Ritter
Publikováno v:
Crystal Research and Technology. 50:425-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72c2e511c459f2d7b1fe5018a34eff9
https://doi.org/10.1002/crat.201400468
https://doi.org/10.1002/crat.201400468
Autor:
D. Cohen-Elias, Barbara Abendroth, Hartmut Stöcker, Dan Ritter, Shlomo Mehari, Dirk C. Meyer, Arkadi Gavrilov, Valentin Garbe
Publikováno v:
Crystal Research and Technology. 50
Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2006a6f5983754bfc18a71a2d47413f
https://doi.org/10.1002/crat.201570011
https://doi.org/10.1002/crat.201570011
Autor:
Barbara Abendroth, David Rafaja, Valentin Garbe, Alexander Schmid, Juliane Weise, Dirk C. Meyer, Mykhaylo Motylenko, Wolfram Münchgesang
Publikováno v:
Journal of Applied Physics. 121:065703
The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e2a9f96acfd2c0c528daa715a6eab9
https://doi.org/10.1063/1.4975485
https://doi.org/10.1063/1.4975485