Simulation of non-linear structural elastodynamic and impact problems using minimum energy and simultaneous diagonalization high-order bases

Autor: Dias, A. P. C., Suzuki, J. L., Valente, G. L., Bittencourt, M. L.

We present the application of simultaneous diagonalization and minimum energy (SDME) high-order finite element modal bases for simulation of transient non-linear elastodynamic problem, including impact cases with neo-hookean hyperelastic materials. T

Externí odkaz: http://arxiv.org/abs/2104.13466

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4H SiC Epitaxial Growth with Chlorine Addition

Autor: La Via, F., Galvagno, G., Foti, G., Mauceri, M., Leone, S., Pistone, G., Abbondanza, G., Veneroni, A., Masi, M., Valente, G. L., Crippa, D.

Publikováno v: Chemical Vapor Deposition; September 2006, Vol. 12 Issue: 9 p509-515, 7p

Epitaxial layers grown with HCl addition: a comparison with the standard process

Autor: Robert P Devaty, David J. Larkin And Stephen E. Saddow, La Via, F., Galvagno, G., Firrincieli, A., Roccaforte, F., Di Franco, S., Ruggiero, A., Barbera, M., Riccardo Reitano, Paolo Musumeci, Lucia CALCAGNO, Foti, G., Mauceri, M., Leone, S., Pistone, G., Portuese, F., Abbondanza, G., Abagnale, G., Valente, G. L., Crippa, D.

Publikováno v: ResearcherID
Università degli Studi di Catania-IRIS

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c59f857a8ddfb224fd99aad28aab780e
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000244227200036&KeyUID=WOS:000244227200036

Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes

Autor: La Via, F., Roccaforte, F., Di Franco, S., Ruggiero, A., Neri, L., Reitano, R., Calcagno, L., Foti, G., MMauceri, Stefano Leone, Pistone, G., Abbondanza, G., Abbagnale, G., Valente, G. L., Crippa, D.

Publikováno v: Scopus-Elsevier
Materials science forum 483 (2005): 429–432.
info:cnr-pdr/source/autori:La Via F., Roccaforte F., Di Franco S., Ruggiero A., Neri L., Reitano R., Calcagno L., Foti G., Mauceri M., Leone S., Pistone G., Abbondanza G., Abbagnale G., Valente G.L., Crippa D./titolo:Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes/doi:/rivista:Materials science forum/anno:2005/pagina_da:429/pagina_a:432/intervallo_pagine:429–432/volume:483

The effects of the Si/H-2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2835ba04626f454ecde77fcf53e8a6cd
http://www.scopus.com/inward/record.url?eid=2-s2.0-33750292196&partnerID=MN8TOARS