Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vakkalakula Bharath Sreenivasulu"'
Autor:
Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi, Aruru Sai Kumar, S. Sudheer Mangalampalli
Publikováno v:
IEEE Access, Vol 12, Pp 144479-144488 (2024)
A Rectangular core-shell (RCS) is analyzed on vertically stacked gate oxide junctionless nanosheet along with doping and gate/dielectric engineering. This paper also proposes an N-type three fins vertically stacked with gate oxide stack junctionless
Externí odkaz:
https://doaj.org/article/7d3851116b084c9b970f63b7f0c1bca7
Autor:
B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal
Publikováno v:
IEEE Access, Vol 12, Pp 131906-131914 (2024)
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-channel HEMT
Externí odkaz:
https://doaj.org/article/ef87a7045fcc497bad75a273733472dd
Autor:
Asisa Kumar Panigrahy, Veera Venkata Sai Amudalapalli, Depuru Shobha Rani, Muralidhar Nayak Bhukya, Hima Bindu Valiveti, Vakkalakula Bharath Sreenivasulu, Raghunandan Swain
Publikováno v:
IEEE Access, Vol 12, Pp 73160-73168 (2024)
This work investigates the effect of single and dual-k spacer materials consisting of different dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) employing hafnium oxide and silicon dioxide as gate insulator to improve
Externí odkaz:
https://doaj.org/article/add9fc6864b041c39c460023a32e423d
Autor:
Ummadisetti Gowthami, Asisa Kumar Panigrahy, Depuru Shobha Rani, Muralidhar Nayak Bhukya, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash
Publikováno v:
IEEE Access, Vol 12, Pp 59716-59725 (2024)
Tree-shaped Nanosheet FETS (NSFET) is the most dependable way to scale down the gate lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET with the gate having a stack of high- $k$ dielectric (HfO2) and SiO2 using d
Externí odkaz:
https://doaj.org/article/88212bc911a64e8491ad8404c8bb60f9
Autor:
Vakkalakula Bharath Sreenivasulu, Aruna Kumari Neelam, Asisa Kumar Panigrahy, Lokesh Vakkalakula, Jawar Singh, Shiv Govind Singh
Publikováno v:
IEEE Access, Vol 12, Pp 7531-7539 (2024)
In this study, for the very first time developing of n- and p-type 3-D single-channel (SC) FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET (NWFET) and nanosheet FET (NSFET) are benchmarked towards device and circ
Externí odkaz:
https://doaj.org/article/04a5449e12ad4c829e8e453319955ee2
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Angamuthu, Revathy, ChettiaGoundar Sengodan, Boopathi, Anandan, Mohanbabu, Varghese, Arathy, Vakkalakula, Bharath Sreenivasulu
Publikováno v:
International Journal of RF & Microwave Computer-Aided Engineering; Oct2022, Vol. 32 Issue 10, p1-11, 11p