Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Vakiv, M. M."'
Autor:
Vakiv M. M.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4-6, Pp 65-70 (2022)
The article is dedicated to the Scientific Research Company "Electron-Carat", which was founded in 1972 as the Lviv Research and Development Institute of Materials - the leading developer of the state-of-art materials. Nowadays, the SRC "Electron-Car
Externí odkaz:
https://doaj.org/article/391743d4edc145328056ff2ce7937808
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4-5, Pp 61-63 (2017)
The paper is devoted to the Scientific-Production Company «Electron-Karat», its history from the moment of creation to the present day. Described are the significant stages of the company’s development and the scientific and technical results ach
Externí odkaz:
https://doaj.org/article/19a56ea82d104541a3df00559507e87c
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 50-53 (2010)
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and
Externí odkaz:
https://doaj.org/article/6edc77f8daeb492589dc36f8a03f90de
Autor:
Shpotyuk, O. I.1,2,3 olehshpotyuk@yahoo.com, Vakiv, M. M.1, Shpotyuk, M. V.4, Kozyukhin, S. A.5
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017, Vol. 20 Issue 1, p26-33. 8p.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015, Vol. 18 Issue 1, p90-96. 7p.
Autor:
Shpotyuk, O. I.1 shpotyuk@novas.lviv.ua, Vakiv, M. M.1, Shpotyuk, M. V.1,2, Ingram, A.3, Filipecki, J.4, Vaskiv, A. P.5
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014, Vol. 17 Issue 3, p243-251. 9p.
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 2, № 1 (2005); 52-56
Сенсорная электроника и микросистемные технологии; Том 2, № 1 (2005); 52-56
Сенсорна електроніка і мікросистемні технології; Том 2, № 1 (2005); 52-56
Сенсорная электроника и микросистемные технологии; Том 2, № 1 (2005); 52-56
Сенсорна електроніка і мікросистемні технології; Том 2, № 1 (2005); 52-56
Проанализированы особенности использования радиационно-чувствительных сред на основе халькогенидных стекол системы As-Ge-S для регистра
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::7010ee0925138905c1591560141caefd
http://semst.onu.edu.ua/article/view/112090
http://semst.onu.edu.ua/article/view/112090
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007, Vol. 10 Issue 3, p23-27. 5p. 4 Charts, 1 Graph.
Akademický článek
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Publikováno v:
Photorefractive Materials, Effects And Devices Prm'93.
Amorphous chalcogenide semiconductors (AChS) are characterized by unique possibilities to photoinduced changes of their physical properties, first of all optical absorption and refractive index [1].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d9d93526ba1d71a7a578b26f58b394
https://doi.org/10.1364/pmed.1993.frh.12
https://doi.org/10.1364/pmed.1993.frh.12