Zobrazeno 1 - 10
of 391
pro vyhledávání: '"Vajtai, Róbert"'
Autor:
Biswas, Abhijit, Serles, Peter, Alvarez, Gustavo A., Schimpf, Jesse, Hache, Michel, Kong, Jonathan, Demingos, Pedro Guerra, Yuan, Bo, Pieshkov, Tymofii S., Li, Chenxi, Puthirath, Anand B., Gao, Bin, Gray, Tia, Zhang, Xiang, Murukeshan, Jishnu, Vajtai, Robert, Dai, Pengcheng, Singh, Chandra Veer, Howe, Jane, Zou, Yu, Martin, Lane W., Clancy, James Patrick, Tian, Zhiting, Filleter, Tobin, Ajayan, Pulickel M.
Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasm
Externí odkaz:
http://arxiv.org/abs/2405.06007
Autor:
Castro-Pardo, Samuel, Puthirath, Anand B., Fan, Shaoxun, Saju, Sreehari, Yang, Guang, Nanda, Jagjit, Vajtai, Robert, Tang, Ming, Ajayan, Pulickel M.
Publikováno v:
J. Mater. Chem. A, 2024, Advance Article
Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation, have not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO2) cathode that undergoes metal-
Externí odkaz:
http://arxiv.org/abs/2305.19002
Autor:
Sassi, Lucas M., Iyengar, Sathvik Ajay, Puthirath, Anand B., Huang, Yuefei, Li, Xingfu, Terlier, Tanguy, Mojibpour, Ali, Teixeira, Ana Paula C., Bharadwaj, Palash, Tiwary, Chandra Sekhar, Vajtai, Robert, Talapatra, Saikat, Yakobson, Boris, Ajayan, Pulickel M.
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continue
Externí odkaz:
http://arxiv.org/abs/2305.14554
Autor:
Biswas, Abhijit, Alvarez, Gustavo A., Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S., Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Pate, Bradford B., Ivanov, Tony G., Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Phys. Rev. Materials 7, 094602 (2023)
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremel
Externí odkaz:
http://arxiv.org/abs/2305.13306
Autor:
Biswas, Abhijit, Xu, Rui, Alvarez, Gustavo A., Zhang, Jin, Christiansen-Salameh, Joyce, Puthirath, Anand B., Burns, Kory, Hachtel, Jordan A., Li, Tao, Iyengar, Sathvik Ajay, Gray, Tia, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Ivanov, Tony, Pate, Bradford B., Zhao, Yuji, Zhu, Hanyu, Tian, Zhiting, Rubio, Angel, Ajayan, Pulickel M.
Publikováno v:
Adv. Mater. 2023, 2304624
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers
Externí odkaz:
http://arxiv.org/abs/2304.12312
Autor:
Biswas, Abhijit, Xu, Rui, Christiansen-Salameh, Joyce, Jeong, Eugene, Alvarez, Gustavo A., Li, Chenxi, Puthirath, Anand B., Gao, Bin, Garg, Arushi, Gray, Tia, Kannan, Harikishan, Zhang, Xiang, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Pate, Bradford B., Ivanov, Tony, Garratt, Elias J., Dai, Pengcheng, Zhu, Hanyu, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Nano Lett. 2023, 23, 15, 6927
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate a
Externí odkaz:
http://arxiv.org/abs/2304.08474
Autor:
Biswas, Abhijit, Xu, Mingfei, Fu, Kai, Zhou, Jingan, Xu, Rui, Puthirath, Anand B., Hachtel, Jordan A., Li, Chenxi, Iyengar, Sathvik Ajay, Kannan, Harikishan, Zhang, Xiang, Gray, Tia, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Ruzmetov, Dmitry A., Shah, Pankaj B., Ivanov, Tony, Zhu, Hanyu, Zhao, Yuji, Ajayan, Pulickel M.
Publikováno v:
Appl. Phys. Lett. 121, 092105 (2022)
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser
Externí odkaz:
http://arxiv.org/abs/2209.00643
Autor:
Biswas, Abhijit, Ruan, Qiyuan, Lee, Frank, Li, Chenxi, Iyengar, Sathvik Ajay, Puthirath, Anand B., Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Tripathi, Manoj, Dalton, Alan, Yakobson, Boris I., Ajayan, Pulickel M.
Publikováno v:
Applied Materials Today, Volume 30, February 2023, 101734
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excell
Externí odkaz:
http://arxiv.org/abs/2208.09469
Autor:
Biswas, Abhijit, Maiti, Rishi, Lee, Frank, Chen, Cecilia Y., Li, Tao, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Saadi, Md Abid Shahriar Rahman, Elkins, Jacob, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Zhao, Yuji, Gaeta, Alexander L., Tripathi, Manoj, Dalton, Alan, Ajayan, Pulickel M.
Publikováno v:
Nanoscale Horizons, 2023, 8, 641-651
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budge
Externí odkaz:
http://arxiv.org/abs/2208.09468
Autor:
Li, Chenxi, Pieshkov, Tymofii, Mei, Zhaobo, Xu, Mingfei, Li, Tao, Murukeshan, Jishnu, Vajtai, Robert, Zhao, Yuji, Biswas, Abhijit, Ajayan, Pulickel
Publikováno v:
In Diamond & Related Materials October 2024 148
