Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vaibhav Ruparelia"'
Autor:
Vibhor Jain, John Pekarik, Crystal Kenney, Judson Holt, Chris Durcan, Jeffrey B. Johnson, Sudesh Saroop, Mona Nafari, Vaibhav Ruparelia, Santosh Kumar Gedela, Prateek Kumar Sharma, Viorel Ontalus, Shweta Khokale, Saloni Chaurasia, Venkata Vanukuru, Alvin Joseph
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e900bacd47b5bbc82eb3954edf4ae348
https://doi.org/10.1109/iedm45625.2022.10019417
https://doi.org/10.1109/iedm45625.2022.10019417
Autor:
Dhawal Mahajan, Vaibhav Ruparelia
Publikováno v:
2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT).
Reliability studies have conventionally been limited to process qualification and as an input to design guides that come with the PDKs. However, Reliability concerns have increased in the present state-of-the-art chip designs due to scaling, new mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7310c242692b11eea4c8344f17ad70
https://doi.org/10.1109/conecct.2018.8482396
https://doi.org/10.1109/conecct.2018.8482396
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811073281
There are various commercially available Analog/RF simulator tools currently in the market, which have their distinctive applications and advantages. In this paper, some of the most widely used Analog/RF simulators (Cadence Spectre/APS, Keysight ADS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27315b6c813729f493b023f84a864512
https://doi.org/10.1007/978-981-10-7329-8_45
https://doi.org/10.1007/978-981-10-7329-8_45
Publikováno v:
2016 International Conference on Energy Efficient Technologies for Sustainability (ICEETS).
The effect of process and temperature variations are becoming more dominant with technology scaling, especially for RF circuits, wherein even the minute variability in FETs and passive devices have a significant impact on the overall circuit behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d830d06ec621da415d909b56387503de
https://doi.org/10.1109/iceets.2016.7583847
https://doi.org/10.1109/iceets.2016.7583847
Publikováno v:
2016 International Conference on Energy Efficient Technologies for Sustainability (ICEETS).
The paper reports the effect of scaling of device parameters like gate work function, nanowire diameter, gate oxide thickness and gate length on the electrical behavior of silicon nanowire field effect transistor based on uncoupled mode space NEGF tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c397260035453dc230306dfef75f3a30
https://doi.org/10.1109/iceets.2016.7583848
https://doi.org/10.1109/iceets.2016.7583848
Publikováno v:
2016 International Conference on Energy Efficient Technologies for Sustainability (ICEETS).
Reduction of power consumption in battery-powered and portable VLSI systems has become an important aspect in system design. The various sources of power dissipation have been discussed in this paper. Opportunities for power optimization and tradeoff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e889f7d25c037f3fed48d06993f4f2
https://doi.org/10.1109/iceets.2016.7583845
https://doi.org/10.1109/iceets.2016.7583845
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9788132227267
The effect of incorporating pairs of dopant atoms of opposite polarities into the nanowire lattice on the electrical behavior of nanowires has been presented in this paper. The dopants used are boron and phosphorus atoms. Intrinsic silicon nanowire i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1269c60a4ddb504e0572b3561013a86
https://doi.org/10.1007/978-81-322-2728-1_38
https://doi.org/10.1007/978-81-322-2728-1_38
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9788132227267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::465e2fdc90338f7981ce9e738ba115e5
https://doi.org/10.1007/978-81-322-2728-1_45
https://doi.org/10.1007/978-81-322-2728-1_45